Electron Mobility in InP

Abstract

The Hall mobility of electrons in InP has been observed as a function of temperature and of carrier concentration. A lattice mobility of 5000 cm~/v-sec at 290~ is calculated from these results, varying with temperature at least as rapidly as T -2. The observations can be interpreted by assuming a combination of lattice and ionized impurity scattering with an effective mass of the order of 0.05 mo or less.

How Lattice Dynamics Moderate the Electronic Properties of Metal-Halide Perovskites

“…In this context, it is useful to remember that even for classic inorganic polar semiconductors, such as GaAs, InSb, InAs, and InP, the charge-carrier mobility does not necessarily vary with T –0.5 , even though a dominance of the Fröhlich mechanism would be expected at high temperatures. Figure illustrates examples for temperature-dependent carrier-mobilities of such semiconductors, taken from literature data, − together with those for MAPbI 3 (ref ), FAPbI 3 (ref ) and FASnI 3 (ref ), presented on a double-logarithmic scale. The figure clearly highlights the phenomenal diversity of trends observed across the various polar semiconductors and over different sections of temperature.…”

“…Charge-carrier mobility μ plotted as a function of temperature T for a range of semiconductors. Data for inorganic nonperovskite semiconductors are shown for n-type samples of doping density n 0 , as determined from Hall measurements and taken from Refs (InSb, orange squares, n 0 = 9.8 × 10 14 cm –3 ), (GaAs, dark-red upward triangles, n 0 = 2.5 × 10 13 cm –3 ), (InAs, red squares, n 0 = 2 × 10 16 cm –3 ) and (InP, purple circles, n 0 = 4.3 × 10 16 cm –3 ). Data for thin films of hybrid metal-halide perovskites were taken from Refs (FASnI 3 , green diamonds, p-doped to p 0 = 7.2 × 10 18 cm –3 ), (FAPbI 3 , blue downward triangles), and (MAPbI 3 , pink hexagons) and had been recorded via optical-pump THz-probe spectroscopy; therefore, they represent the product of the charge-carrier mobility and the excitation-photon-to-free-charge branching ratio.…”

The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and Phosphine

“…The mobility value of 120,000 cm2/vsec for InAs is to be compared to the best previously reported value of 112,000 cm2/v-sec (9). However, the value of 18,000 cm2/v-sec for InP is somewhat lower than the best reported value of 23,400 cm2/v-sec (10).…”

“…4 and 5 for room temperature and 77~ respectively. The data of other workers (3,5,(9)(10)(11), and the results of a theoretical analysis of Ehrenreich (12) based on polar scattering alone, are included for comparison. In general, the mobility values at room temperature are good.…”