“…Charge-carrier mobility μ plotted as a function of temperature T for a range of semiconductors. Data for inorganic nonperovskite semiconductors are shown for n-type samples of doping density n 0 , as determined from Hall measurements and taken from Refs (InSb, orange squares, n 0 = 9.8 × 10 14 cm –3 ), (GaAs, dark-red upward triangles, n 0 = 2.5 × 10 13 cm –3 ), (InAs, red squares, n 0 = 2 × 10 16 cm –3 ) and (InP, purple circles, n 0 = 4.3 × 10 16 cm –3 ). Data for thin films of hybrid metal-halide perovskites were taken from Refs (FASnI 3 , green diamonds, p-doped to p 0 = 7.2 × 10 18 cm –3 ), (FAPbI 3 , blue downward triangles), and (MAPbI 3 , pink hexagons) and had been recorded via optical-pump THz-probe spectroscopy; therefore, they represent the product of the charge-carrier mobility and the excitation-photon-to-free-charge branching ratio.…”