Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Javanainen, Arto; Galloway, K.F.; Nicklaw, Christopher; Bosser, Alexandre Louis; Ferlet-Cavrois, V.; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronald D.; Weller, Robert A.; Virtanen, A.

doi:10.1109/tns.2016.2616921

Cited by 68 publications

(59 citation statements)

References 21 publications

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“…At higher voltages, the difference becomes smaller. Nevertheless, these data illustrate the fact that the degradation rate depends strongly on the bias voltage, as reported earlier in [15].…”

Section: Resultssupporting

confidence: 86%

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Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Javanainen

Turowski²,

Galloway

et al. 2017

IEEE Trans. Nucl. Sci.

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Section: Resultssupporting

confidence: 86%

“…Heavy-ion exposure has been shown to increase reverse leakage current in SiC Schottky diodes, when a sufficient reverse bias is applied during radiation exposure [6], [7], [15]. When an ion beam hits the device at an angle off normal incidence, a similar, but weaker, effect is observed [11].…”

Section: Resultsmentioning

confidence: 98%

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Javanainen

Turowski²,

Galloway

et al. 2017

IEEE Trans. Nucl. Sci.

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“…3 for a very low ion flux. Significant discrete increases in leakage current are evident for individual ion strikes, consistent with earlier experiments [9,10]. Leakage current increases as long as the beam is on.…”

Section: Introductionsupporting

confidence: 87%

“…In addition, efficient Schottky switching diodes in SiC can be manufactured that exhibit very low on-state voltage and minimal turn-off switching loss with almost no reverserecovery behavior, which makes SiC a good candidate for space power conversion applications. However, the sensitivity of SiC power devices (MOSFETs and diodes) to particle radiation has been found to be higher than expected, given the wide bandgap and high critical electric field, as shown by multiple researchers who have consistently measured significant leakage current increases and single-event burnout in SiC devices [1][2][3][4][5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Witulski

Arslanbekov

Raman

et al. 2018

IEEE Trans. Nucl. Sci.

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Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal-semiconductor interface or localized melting of the silicon carbide lattice.Index Terms-Single event effects, heavy ions, silicon carbide, power diodes, junction barrier schottky (JBS) diode, single-event burnout, thermal coefficients of silicon carbide.

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Modeling of radiation-induced defect recovery in 3C-SiC under high field bias conditions

Peterson

Senesky

2019

Computational Materials Science

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In this work, the implications of high field bias conditions in radiation-induced defect recovery in 3C-SiC crystals is studied. It is well known that transient heating effects (or thermal spikes) occur when energetic swift heavy ions (SHIs) deposit energy to the surrounding medium via ionization. Here, we explore the dynamics of this transient event under high background electric fields in 3C-SiC, which is what occurs when an ion strike coincides with field-sensitive volumes. In this study, we use the Ensemble Monte Carlo method to quantify how the energy deposition of the ionized regions change in response to high background electricfields. Subsequently, we study the relationship between the radiation-induced thermal spike and defect recovery using molecular dynamics simulations. We find that field strengths below the critical breakdown of wide bandgap devices are sufficient to exacerbate the localized heating, which subsequently enhances the defect recovery effect. This work is beneficial for 3C-SiC electronics and materials used in high radiation environments.

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Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Cited by 68 publications

References 21 publications

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Modeling of radiation-induced defect recovery in 3C-SiC under high field bias conditions

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