Heavy and light hole minority carrier transport properties in low-doped n-InGaAs lattice matched to InP

Abstract

Minority carrier diffusion lengths in low-doped n-InGaAs using InP/InGaAs double-heterostructures are reported using a simple electrical technique. The contributions from heavy and light holes are also extracted using this methodology, including minority carrier mobilities and lifetimes. Heavy holes are shown to initially dominate the transport due to their higher valence band density of states, but at large diffusion distances, the light holes begin to dominate due to their larger diffusion length. It is found that heavy holes have a diffusion length of 54.5 ± 0.6 µm for an n-InGaAs doping of 8.4 × 10 15 cm −3 at room temperature, whereas light holes have a diffusion length in excess of 140 µm. Heavy holes demonstrate a mobility of 692 ± 63 cm 2 /Vs and a lifetime of 1.7 ± 0.2 µs, whereas light holes demonstrate a mobility of 6200 ± 960 cm −2 /Vs and a slightly longer lifetime of 2.6 ± 1.0 µs. The presented method, which is limited to low injection conditions, is capable of accurately resolving minority carrier transport properties.

The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As

“…where D p is the diffusivity of the minority carriers. It should be remarked that a correction factor for the diffusion current is needed in our case due to the long hole diffusion length of ~54 µm [13]. Fortunately, the general expression for this correction factor has been derived in [18].…”

“…To reflect the real TDD on the carrier lifetime, we use different values based on the active zones where the lifetime is extracted: the TDD from DLTS (E2 in figure 2) is used for the generation lifetime, because the probed depletion region is always confined in the n-layer (up to 750 nm from the p+n junction at a reverse bias of 5 V for the considered doping density). On the other hand, due to the large diffusion length of minority carriers (holes) in n type In .53 Ga .47 As (54 µm for 8.4 × 10 15 cm −3 ) [13], the injected minority carriers from photoluminescence (PL) and from the p+ layer under forward bias can easily reach the n−/n+ layer interface, causing recombination in the interface and n+ contact layer. As a result, the mean value of TDD from HR-XRD, DLTS E2 is considered instead for the recombination lifetime derived from PL and forward junction current.…”

Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths

“…In contrast, when V g is negative, there is no depletion layer. Therefore, the hole lifetime becomes close to that in InGaAs bulk 54 , resulting in a short τ F . Note that the obtained temporal response of ~100 μs is sufficiently fast for an optical power monitor in a photonic circuit.…”

“…As a result, the hole lifetime makes τ F long. The hole lifetime of ~100 μs is two orders of magnitude larger than that in InGaAs bulk 54 since the electric field in the depletion layer of the InGaAs channel separates electrons and holes, making the hole lifetime long. In contrast, when V g is negative, there is no depletion layer.…”

Investigation of the spatial distribution of hot carriers in quantum-well structures via hyperspectral luminescence imaging

“…This effect is associated with the diffusion of carriers in the planar structure due to the gradient in the charge density, which makes them move and recombine at a position different from where they are generated. 44,45 As shown in Fig. 5(c), the change in ΔT as a function of distance follows the spatial distribution of the laser up to 35 μm; beyond, the magnitude of ΔT quickly drops to zero.…”