The spreading resistance of a round ohmic contact was calculated by solving the Laplace equation using analytic, numerical, and finite element methods. From this, formulas were found to calculate accurate values (better than 0.1%) of the spreading resistance over the entire range of contact size to substrate thickness ratio.
This paper addresses a relatively simple method of measuring Young's modulus and residual stress in microelectromechanical systems (MEMS) type structures. A surface profilometer is used to measure the deflection of thin film fixed-fixed beams due to the force applied by the profilometer probe. These measurements are analyzed using analytical beam theory. The treatment of end effects and the accuracy of the measurement are discussed. Measurements and results are presented for PECVD grown silicon nitride films.
Two approaches to the growth of high-quality epitaxial Ge epilayers on (100) Si have been investigated. The first consisted of compositional-grading Si1−xGex layers and the use of strained-layer superlattices as dislocation filters. In general, this method produced unsatisfactory results, due to the difficulty in achieving good epitaxial growth in the Ge concentration interval 30%−70%. The second approach consisted of simply depositing pure Ge directly on (100) Si. Excellent epitaxial films with dislocation densities of less than 107 cm−2 and smooth morphology were obtained after optimization of the growth parameters. The initial growth temperature and post-growth annealing were found to be critical in obtaining good epitaxial material.
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