Heavily silicon-doped GaN by MOVPE

Halidou, I.; Benzarti, Z.; Chine, Z.; Boufaden, T.; Jani, B. El

doi:10.1016/s0026-2692(00)00118-x

Cited by 37 publications

(20 citation statements)

References 23 publications

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“…2 and shown in Table I were taken from the literature. 14 In Fig. 2, the gradual decrease in µ(RT) is qualitatively explained by this theory.…”

Section: -mentioning

confidence: 57%

“…Figure 2 presents the RT electron mobility µ(RT) of PSD-grown Si-doped and Ge-doped GaN as a function of n(RT). The solid lines indicate the theoretical electron mobility for degenerate GaN based on a model reported by Halidou et al 14 For degenerate semiconductors, the electron mobility is known to be mainly limited by the ionized impurity scattering, even at RT. If we assume that all of the donors (N D ) and all of the acceptors (N A ) are ionized at RT, the electron mobility limited by the ionized impurity scattering limit can be analytically expressed using the compensation ratio,…”

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confidence: 99%

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Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

et al. 2017

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We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm−3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V−1 s−1 at a carrier concentration of 3.9 × 1020 cm−3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

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“…2 and shown in Table I were taken from the literature. 14 In Fig. 2, the gradual decrease in µ(RT) is qualitatively explained by this theory.…”

Section: -mentioning

confidence: 57%

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confidence: 99%

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

et al. 2017

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“…This result indicates that any self-compensation effect 18 and/or the undesirable formation of silicon nitride, 19 which are undesirable for heavy Si doping by MOCVD, were negligible in the case of GaN grown using PSD. ) shown in Fig.…”

Section: à3mentioning

confidence: 83%

Electrical properties of Si-doped GaN prepared using pulsed sputtering

Arakawa

Ueno

Imabeppu

et al. 2017

Applied Physics Letters

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In this study, we investigated the basic electrical properties of Si-doped wurtzite GaN films prepared using a low-temperature pulsed sputtering deposition (PSD) process. We found that the electron concentration can be controlled in the range between 1.5 × 1016 and 2.0 × 1020 cm−3. For lightly Si-doped GaN ([Si] = 2.1 × 1016 cm−3), the room temperature (RT) electron mobility was as high as 1008 cm2 V−1 s−1, which was dominantly limited by polar optical phonon scattering. Moreover, we found that heavily Si-doped GaN prepared using PSD exhibited an RT mobility as high as 110 cm2 V−1 s−1 at an electron concentration of 2 × 1020 cm−3, which indicated that the resistivity of this film was almost as small as those of typical transparent conductive oxides such as indium tin oxide. At lower temperatures, the electron mobility increased to 1920 cm2 V−1 s−1 at 136 K, and the temperature dependence was well explained by conventional scattering models. These results indicate that Si-doped GaN prepared using PSD is promising not only for the fabrication of GaN-based power devices but also for use as epitaxial transparent electrode materials for nitride based optical devices.

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“…The closest reported measurement in GaN:Si layers has a carrier density n ¼ 2.4 Â 10 20 cm À3 with a decreased mobility l ¼ 9 cm 2 ÁV À1 Ás À1 ascribed to self-compensation phenomenon. 22 However, the impact of cracks on the measured carrier density and mobility is not known in the latter sample. Our measurements show that dopant incorporation is more efficient at this high carrier concentration in Si-doped wire-based devices as compared to conventional epitaxial Si-doped layers.…”

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confidence: 97%

“…Given the microscale of the studied wires, one can compare the mobility dependence on carrier concentration for GaN films with the one measured in GaN wires. Experimental data for n-GaN films [22][23][24][25][26][27] with different growth methods (MOVPE and MBE) and different dopant atoms (Si and Ge) are thus reported in Figure 2(c), and their comparison with GaN wires will be discussed later.…”

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confidence: 99%

Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

et al. 2013

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International audienceCombined thermoelectric-resistivity measurements and micro-Raman experiments have been performed on single heavily Si-doped GaN wires. In both approaches, similar carrier concentration and mobility were determined taking into account the non-parabolicity of the conduction band. The unique high conductivity of Si-doped GaN wires is explained by a mobility µ=56 cm2 /V s at a carrier concentration n = 2.6 10^20 /cm 3. This is attributed to a more efficient dopant incorporation in Si-doped GaN microwires as compared to Si-doped GaN planar layers. (c) 2013 AIP Publishing LLC

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Heavily silicon-doped GaN by MOVPE

Cited by 37 publications

References 23 publications

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

Electrical properties of Si-doped GaN prepared using pulsed sputtering

Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

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