Electrical properties of Si-doped GaN prepared using pulsed sputtering

Arakawa, Yasuaki; Ueno, K.; Imabeppu, Hideyuki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

doi:10.1063/1.4975056

Cited by 61 publications

(45 citation statements)

References 25 publications

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“…In addition, α is a measure of how rapidly the mobility increases from µ min to µ max with decreasing doping level. This model has been proved to describe the dependence of mobility on carrier density in wide‐gap semiconductors . Fitting Eq.…”

Section: Resultsmentioning

confidence: 99%

Low‐Temperature Fabrication and Performance of Polycrystalline CuI Films as Transparent p‐Type Semiconductors

Yamada

Kondo

Ino

2018

Physica Status Solidi (a)

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Transparent p-type polycrystalline CuI films with high hole mobility are produced by solid iodination of Cu 3 N precursor layers and subsequent heat treatment at 120 C. The hole mobility reached 20 cm 2 V À1 s À1 in the CuI films fabricated on both glass and polyethylene terephthalate substrates. Furthermore, transparent p-n diodes with sufficiently high rectification ratio (6 Â 10 6 ) and ideality factor (1.6) are successfully fabricated by employing a heterojunction of p-type CuI and n-type amorphous In-Ga-Zn-O (a-IGZO) layers. The CuI/a-IGZO heterojunction exhibits the photovoltaic effect, with a short-circuit current of 0.33 mA and an open-circuit voltage of 10 mV under UV illumination at a wavelength of 365 nm and intensity of 1.9 mW cm À2 . The photoresponse at zero bias is sufficiently quick, and thus, the photovoltaic properties of the CuI/a-IGZO diodes rendere them potential candidates for visible-light-blind and self-powered UV photodetectors. These findings suggest that CuI is an excellent transparent p-type semiconductor that can be fabricated at low temperature.

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Section: Resultsmentioning

confidence: 99%

Low‐Temperature Fabrication and Performance of Polycrystalline CuI Films as Transparent p‐Type Semiconductors

Yamada

Kondo

Ino

2018

Physica Status Solidi (a)

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“…The details of the growth procedure have been reported elsewhere. 12,13 To investigate their electrical properties, we deposited the n-type doped GaN epilayers onto commercially available semi-insulating C-doped GaN templates on sapphire as starting substrates. The dislocation density of the GaN templates was typically 5.0 × 10 9 cm 2 .…”

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confidence: 99%

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

et al. 2017

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We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm−3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V−1 s−1 at a carrier concentration of 3.9 × 1020 cm−3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

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“…[ 7 ] PSD provides a wider range of doping capabilities compared to conventional techniques such as MOCVD and molecular beam epitaxy. [ 8–10 ] We investigated the electron transport properties of PSD‐grown n‐type AlN on sapphire with a high Si‐doping level above 10 19 cm −3 and reported that Si‐doped AlN yielded clear n‐type conductivity and electron mobility of 44 cm −2 V −1 s −1 . [ 11 ]…”

Section: Introductionmentioning

confidence: 99%

High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing

Sakurai

Ueno

Kobayashi

et al. 2021

Physica Status Solidi (a)

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The formation of high‐quality n‐type AlN with a dislocation density of 2.8 × 108 cm−2 on sapphire (0001) using pulsed sputtering deposition (PSD) and high‐temperature (HT) annealing is demonstrated. The surface morphology of PSD‐grown AlN on AlN templates prepared by HT annealing consists of an ordered stepped‐and‐terraced structure with a step height of 1 ML. Si‐doped AlN on the HT‐annealed AlN template yields the high electron mobility of 141 cm2 V−1 s−1 at room temperature, which is attributed to the reduction in the dislocation density and compensating centers. These results indicate that the PSD is a promising epitaxial technique for the fabrication of ultraviolet (UV) light‐emitting diodes (LEDs) and future power devices.

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Electrical properties of Si-doped GaN prepared using pulsed sputtering

Cited by 61 publications

References 25 publications

Low‐Temperature Fabrication and Performance of Polycrystalline CuI Films as Transparent p‐Type Semiconductors

Low‐Temperature Fabrication and Performance of Polycrystalline CuI Films as Transparent p‐Type Semiconductors

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing

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