$\hbox{MoS}_{2}$ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming

Liu, Han; Gu, Jiangjiang; Ye, P. D.

doi:10.1109/led.2012.2202630

Cited by 105 publications

(88 citation statements)

References 27 publications

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“…Like graphene, these materials have highly tunable properties based upon both layer count and the choice of substrate/top gate materials. [1][2][3][4] In particular, MoS 2 , which as a bulk material exhibits an indirect bandgap of 1.29 eV and modest electron mobilities, has a direct bandgap of 1.8 eV for a single molecular layer as well as reported field-effect mobilities as high as 470 cm 2 /V s when combined with appropriate substrates and/or overcoats. 5,6 While the latter figure does not compare with the values that can easily be obtained in graphene, MoS 2 , with its large layer number-dependent bandgap, allows for the fabrication of transistors with on/off ratios exceeding 10 7 .…”

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confidence: 99%

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Amani

Chin

Birdwell

et al. 2013

Applied Physics Letters

209

150

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Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm2/V s at 300 K without a high-κ dielectric overcoat and increased to 16.1 cm2/V s with a high-κ dielectric overcoat. In addition the devices show on/off ratios ranging from 105 to 109.

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mentioning

confidence: 99%

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Amani

Chin

Birdwell

et al. 2013

Applied Physics Letters

209

150

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“…, which is comparable with the results elsewhere. 5,10 In addition to that, the maximum field effect mobility,…”

Section: -7mentioning

confidence: 97%

“…4,[8][9][10] In particular, further enhancement of its mobility is of upmost interest for the channel applicability because monolayer MoS 2 has previously showed poor mobility of < 30 cm 2 /V·S. 5,10,11 Though the field effect mobility could be significantly improved over ~1,000 cm 2 /V·S from the dielectric screening effect by upper high-k dielectric passivation such as Al 2 O 3 and HfO 2 , it still requires more investigation with implementation of much higher permittivity dielectric.…”

Section: -7mentioning

confidence: 99%

“…4,5 To date, nevertheless, studies on MoS 2 electronics is still in their infancy, since only a few research groups have reported electrical properties of MoS 2 -channel FETs based upon their theoretical predictions and experimental results. 4,[8][9][10] In particular, further enhancement of its mobility is of upmost interest for the channel applicability because monolayer MoS 2 has previously showed poor mobility of < 30 cm 2 /V·S. 5,10,11 Though the field effect mobility could be significantly improved over ~1,000 cm 2 /V·S from the dielectric screening effect by upper high-k dielectric passivation such as Al 2 O 3 and HfO 2 , it still requires more investigation with implementation of much higher permittivity dielectric.…”

Section: -7mentioning

confidence: 99%

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Single-Layer MoS₂Field Effect Transistor with Epitaxially Grown SrTiO₃Gate Dielectric on Nb-doped SrTiO₃Substrate

Kim¹,

Son²

2013

Bulletin of the Korean Chemical Society

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Over the past several decades, the aggressive scaling of Si-based metal-oxide-semiconductor field-effect transistor (MOSFET) devices has been successfully achieved. More recently, however, as the technology node approaches its physical limit down to 10 nm regime, alternative methodologies have been made for further extension of the Moore's law, which has mainly focused on implementation of high carrier mobility channel materials. Of various path findings, the advent of graphene, a fascinating two-dimensional (2D) crystal, has received intensive attention, especially due to its massless charge carriers.1,2 Although the absence of intrinsic band gap limits its potential applications as novel channel materials, the discovery of the graphene has spurred the emergence of other material families with the layered structures including transition metal dichalcogenides (MoS 2 , WS 2 and NbSe 2 ), and topological insulators (Bi 2 Te 3 and Bi 2 Se 3 ). 3-7Interestingly, in contrast to the semimetal graphene, MoS 2 as one of the transition metal dichalcogenides has revealed the remarkable potential as the new channel owing to its semiconductor-like bandgap (a direct bandgap of ~1.8 eV for single-layer MoS 2 ), thermal stability, carrier mobility, and compatibility with the CMOS process.4,5 To date, nevertheless, studies on MoS 2 electronics is still in their infancy, since only a few research groups have reported electrical properties of MoS 2 -channel FETs based upon their theoretical predictions and experimental results. 4,[8][9][10] In particular, further enhancement of its mobility is of upmost interest for the channel applicability because monolayer MoS 2 has previously showed poor mobility of < 30 cm 2 /V·S. 5,10,11 Though the field effect mobility could be significantly improved over ~1,000 cm 2 /V·S from the dielectric screening effect by upper high-k dielectric passivation such as Al 2 O 3 and HfO 2 , it still requires more investigation with implementation of much higher permittivity dielectric. 12,13 In this work, therefore, we report properties of single-layer MoS 2 transistor with an epitaxially grown SrTiO 3 (STO) gate dielectric on a Nb-doped STO substrate. Figure 1(a) schematically illustrates the MoS 2 nanosheet transistor. To begin with, the epitaxial STO film with a thickness of ~100 nm was deposited on Nb-doped STO (Nb:STO, Nb content ~1 wt % and resistivity ~0.001 Ω·cm) substrate by using pulsed laser deposition (PLD). To produce an atomically flat surface on the Nb:STO, which serves as a back-gate, it was dipped in a dilute HF solution, followed by high-temperature annealing at 1000°C. 14,15 Then, the Nb:STO substrate had terraces with a uniform interval and step height of about 100 nm and 0.3 nm, respectively, and a very low surface roughness below 0.2 nm. After the 100 nmthick epitaxial STO growth, monolayer MoS 2 sheet was exfoliated from commercially available bulk crystal (SPI Supplies) and then transferred to the STO/Nb:STO substrate. Finally, electrical source/drain (S/D) contacts were fabricated...

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“…UPS spectra of bulk MoS 2 and multilayer graphene. technique 15,16 and transferred to a heavily doped silicon substrate capped with 300 nm SiO 2 . The heavily doped silicon serves as the bottom gate of our device.…”

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confidence: 99%

High performance MoS2 TFT using graphene contact first process

et al. 2017

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An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT) is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when Vg<VFB, the intrinsic graphene changes into p-type, so graphene contact can achieve lower off current by lowering the Fermi level. To further improve the performance of MoS2 TFT, a new method using graphene contact first and MoS2 layer last process that can avoid PMMA residue and high processing temperature is applied. MoS2 TFT using this method shows on/off current ratio up to 6×106 order of magnitude, high mobility of 116 cm2/V-sec, and subthreshold swing of only 0.515 V/dec.

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$\hbox{MoS}_{2}$ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming

Cited by 105 publications

References 27 publications

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Single-Layer MoS₂Field Effect Transistor with Epitaxially Grown SrTiO₃Gate Dielectric on Nb-doped SrTiO₃Substrate

High performance MoS2 TFT using graphene contact first process

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$\hbox{MoS}_{2}$ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming

Cited by 105 publications

References 27 publications

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Single-Layer MoS2Field Effect Transistor with Epitaxially Grown SrTiO3Gate Dielectric on Nb-doped SrTiO3Substrate

High performance MoS2 TFT using graphene contact first process

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Single-Layer MoS₂Field Effect Transistor with Epitaxially Grown SrTiO₃Gate Dielectric on Nb-doped SrTiO₃Substrate