Atomic layer deposition ͑ALD͒ Al 2 O 3 is a high-quality gate dielectric on III-V compound semiconductor with low defect density, low gate leakage, and high thermal stability. The high-quality of Al 2 O 3 / InGaAs interface surviving from high temperature annealing is verified by excellent capacitance-voltage ͑CV͒ curves showing sharp transition from depletion to accumulation with "zero" hysteresis, 1% frequency dispersion per decade at accumulation capacitance, and strong inversion at split CV measurement. An enhancement-mode n-channel InGaAs metal-oxide-semiconductor field-effect-transistor is also demonstrated by forming true inversion channel at Al 2 O 3 / InGaAs interface.
The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In 0.53 Ga 0.47 As channel and atomic-layer-deposited (ALD) Al 2 O 3 /WN gate stacks by a top-down approach. A wellcontrolled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel length (L ch ) down to 50nm. A detailed scaling metrics study (S.S., DIBL, V T ) with L ch of 50nm -110nm and fin width (W Fin ) of 30nm -50nm are carried out, showing the immunity to short channel effects with the advanced 3D structure. The GAA structure has provided a viable path towards ultimate scaling of III-V MOSFETs.
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