Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Abstract

Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm2/V s at 300 K without a high-κ dielectric overcoat and increased to 16.1 cm2/V s with a high-κ dielectric overcoat. In addition the devices show on/off ratios ranging from 105 to 109.

Giant magneto-optical Raman effect in a layered transition metal compound

“…S6). Note that the values of the optical mobility determined in the present work are much larger than those measured using transport measurements (21)(22)(23)(24)(25) but similar to the values obtained in a high-k HfO 2 gated field-emission transistor (20,26). Furthermore, our results are also greater than the calculated phonon-scattering-limited value of ∼400 cm 2 /V·s (27).…”

Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application

“…The calculated carrier mobility of the MoS 2 FET was ~21.8 cm 2 V −1 s −1 , suggesting excellent transporting property compared with previously reported back-gated FETs fabricated by CVD grown monolayer MoS 2 [6, 22,25].…”

“…While mechanical exfoliated monolayer MoS 2 flakes display excellent electronic and optoelectronic properties, the small size and the low production of these monolayer MoS 2 flakes hinder them from further development. Synthesis of large-area MoS 2 films have been reported in the past few years [22][23][24][25][26][27]. However, the preparation of large-size monolayer MoS 2 single crystals remain to be improved in view of its superior electronic and optoelectronic characteristics [28][29][30][31].…”

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

“…At present, the reported values of the electron mobility in CVD-grown MoS 2 devices [34][35][36] are at least two orders of magnitude smaller than the intrinsic limit 41 , suggesting a high degree of disorder and scattering. An inhomogeneous potential distribution in a semiconductor leads to the smearing of the band edge and the formation of a tail of band gap state 42 .…”