“…Graphene has mobility as high as 10 5 cm 2 V −1 s −1 , but it is gapless, so on/off ratio of FET with graphene as channel is always low although many modifications such as narrowing into nanoribbons and nitrogen doping have been tried [3,[6][7][8][9][10][11][12][13][14][15]. Subsequently, monolayer MoS2 exhibits significant indirect-to-direct band structure transition [16], but its highest mobility is as low as 200-500 cm 2 V −1 s −1 [4,17,18], which is much lower than that of classical semiconductors such as silicon (1,400 cm 2 V −1 s −1 ), and InP (5,400 cm 2 V −1 s −1 ). Recently, black phosphorus (BP) was found to have both more suitable bandgap and higher mobility (1000 cm 2 V −1 s −1 ) than monolayer MoS2, showing promising potentials as high-performance 2D channel material [2,[19][20][21][22][23][24][25].…”