2016
DOI: 10.1007/s40843-016-0130-1
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Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application

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Cited by 57 publications
(52 citation statements)
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“…Graphene has mobility as high as 10 5 cm 2 V −1 s −1 , but it is gapless, so on/off ratio of FET with graphene as channel is always low although many modifications such as narrowing into nanoribbons and nitrogen doping have been tried [3,[6][7][8][9][10][11][12][13][14][15]. Subsequently, monolayer MoS2 exhibits significant indirect-to-direct band structure transition [16], but its highest mobility is as low as 200-500 cm 2 V −1 s −1 [4,17,18], which is much lower than that of classical semiconductors such as silicon (1,400 cm 2 V −1 s −1 ), and InP (5,400 cm 2 V −1 s −1 ). Recently, black phosphorus (BP) was found to have both more suitable bandgap and higher mobility (1000 cm 2 V −1 s −1 ) than monolayer MoS2, showing promising potentials as high-performance 2D channel material [2,[19][20][21][22][23][24][25].…”
Section: Introductionmentioning
confidence: 99%
“…Graphene has mobility as high as 10 5 cm 2 V −1 s −1 , but it is gapless, so on/off ratio of FET with graphene as channel is always low although many modifications such as narrowing into nanoribbons and nitrogen doping have been tried [3,[6][7][8][9][10][11][12][13][14][15]. Subsequently, monolayer MoS2 exhibits significant indirect-to-direct band structure transition [16], but its highest mobility is as low as 200-500 cm 2 V −1 s −1 [4,17,18], which is much lower than that of classical semiconductors such as silicon (1,400 cm 2 V −1 s −1 ), and InP (5,400 cm 2 V −1 s −1 ). Recently, black phosphorus (BP) was found to have both more suitable bandgap and higher mobility (1000 cm 2 V −1 s −1 ) than monolayer MoS2, showing promising potentials as high-performance 2D channel material [2,[19][20][21][22][23][24][25].…”
Section: Introductionmentioning
confidence: 99%
“…High quality, large-area and single-layer MoS 2 can be fabricated by chemical vapor deposition (CVD) [5][6], but the grain boundary (GB) is inevitable and difficult to be identified. GBs affect the electron transfer process, and degrade the electrical and mechanical performances of MoS 2 , which limit the application of MoS 2 [7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…Molybdenum disulfide (MoS 2 ), an earth-abundant and high activity material, has attracted extensive attention as an alternative to replace noble electrocatalysts in the HER [15][16][17][18]. MoS 2 has a hexagonally layered packed structure, consisting of a single layer of Mo between two sulfur layers in a trigonal prismatic arrangement.…”
Section: Introductionmentioning
confidence: 99%