Hardness Assurance for Proton Direct Ionization-Induced SEEs Using&lt;newline/&gt; a High-Energy Proton Beam

Dodds, N. A.; Schwank, J.R.; Shaneyfelt, M.R.; Dodd, P.E.; Doyle, B.L.; Trinczek, M.; Blackmore, E. W.; Rodbell, K. P.; Gordon, Michael S.; Reed, Robert A.; Pellish, J. A.; LaBel, Kenneth A.; Marshall, P.W.; Swanson, Scot E.; Vizkelethy, György; Deusen, Stuart Van; Sexton, F.W.; Martinez, M.J.

doi:10.1109/tns.2014.2364953

Cited by 44 publications

(25 citation statements)

References 18 publications

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“…Particles with an LET value of 0.1 deposit approximately 0.001 pC/um of charge The fact that the SRAM cell was upsetting e values of deposited charge indicates a very lo for the SRAM cell. Specifically, these SRA vulnerable to upsets due to muons, low-ene high-energy electrons [5][6][7]. If the SRAM these particles is confirmed, it may significa FIT rates for terrestrial operations.…”

Section: Resultsmentioning

confidence: 96%

Multi-cell soft errors at the 16-nm FinFET technology node

Tam

Bhuva

Massengill

et al. 2015

2015 IEEE International Reliability Physics Symposium

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Section: Resultsmentioning

confidence: 96%

Multi-cell soft errors at the 16-nm FinFET technology node

Tam

Bhuva

Massengill

et al. 2015

2015 IEEE International Reliability Physics Symposium

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“…For example, N. A. Dodds et al [12] have been developing a promising hardness assurance test method separate from, but complementary to, this work. They exploit many of the challenges discussed here, such as beam energy degradation and straggle, in order to develop a nearly closed solution to calculate on-orbit event rates induced by low-energy protons.…”

Section: Discussionmentioning

confidence: 99%

“…By reducing the substrate thickness, we increased our ability to use lower energy particles for single-event effects testing, but in doing so we also introduced a substantial error source. In the ideal case for an SOI component, we would completely remove the DUT substrate using a chemical process [12], [17], [18], but that approach is not always possible or even desirable. Since a significant amount of substrate is still present, it acts like one of the aluminum degraders further upstream, lowering the beam energy and increasing straggle.…”

Section: Conversion Of Degrader Thickness To Average Energymentioning

confidence: 99%

“…This is especially true for components or environments where the low-energy proton event rate contribution could be significant. Sierawski et al [2], Cannon et al [4], and Dodds et al [12] showed there are instances where low-energy proton SEE could significantly contribute to a component's single-event radiation response, as indicated in [2], [12] for 65 nm bulk and SOI CMOS SRAMs. A higher inclination and/or higher altitude trajectory could increase these event rates substantially.…”

Section: Introductionmentioning

confidence: 99%

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Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies

Pellish

Marshall²,

Rodbell

et al. 2014

IEEE Trans. Nucl. Sci.

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We report low-energy proton and low-energy alpha particle SEE data on a 32 nm SOI CMOS SRAM that demonstrates the criticality of using low-energy protons for SEE testing of highly-scaled technologies. Low-energy protons produced a significantly higher fraction of multi-bit upsets relative to single-bit upsets when compared to similar alpha particle data. This difference highlights the importance of performing hardness assurance testing with protons that include energy distribution components below 2 MeV. The importance of low-energy protons to systemlevel single-event performance is based on the technology under investigation as well as the target radiation environment.

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“…Space is a proton rich environment [3] and proton-induced SEU and were conventionally dominated by secondary ions generated from nuclear reactions between high-energy protons and other atoms in devices [4]. However, SRAMs have scaled to the point that even protons with low-energy can deposit sufficient energy in the sensitive volume to cause upsets via direct ionization [5].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Energy Loss Straggling on SEUs Induced by Low-Energy Protons in 28 nm FDSOI SRAMs

Zhang¹,

Xu²,

Chi³

et al. 2019

Applied Sciences

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Sensitive volume thickness for silicon on insulator (SOI) devices has scaled to the point that energy loss straggling cannot be ignored within the development of the manufacturing process. In this study, irradiation experiments and Geant4 simulation were carried out to explore the influence of energy loss straggling on single event upsets (SEUs) caused by sub-8 MeV proton direct ionization. We took a 28 nm fully-depleted SOI static random-access memory (SRAM) as the research target. According to our results, the depositing energy spectrum formed by monoenergetic low-energy protons that penetrated through the sensitive volume of the target SRAM was extremely broadened. We concluded that the SEUs we observed in this article were attributed to energy loss straggling. Therefore, it is sensible to take the new mechanism into consideration when predicting proton-induced SEUs for modern nanometer SOI circuits, instead of the traditional linear energy transfer (LET) method.

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Hardness Assurance for Proton Direct Ionization-Induced SEEs Using<newline/> a High-Energy Proton Beam

Cited by 44 publications

References 18 publications

Multi-cell soft errors at the 16-nm FinFET technology node

Multi-cell soft errors at the 16-nm FinFET technology node

Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies

The Effect of Energy Loss Straggling on SEUs Induced by Low-Energy Protons in 28 nm FDSOI SRAMs

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