Hall Sensors for Extreme Temperatures

Jankowski, Jakub; El-Ahmar, Semir; Oszwałdowski, M.

doi:10.3390/s110100876

Cited by 45 publications

(24 citation statements)

References 16 publications

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“…4f). In particular, the temperature coefficient is as low as 30 ppm·K −1 below 200 K, which is much better than that of all published conventional Hall elements with typical temperature coefficient of around 1000 ppm·K −1 4262728. On the other hand, the offset voltage is also found to hardly change over a wide temperature range from 1.8 K to 400 K, which fluctuates between −4 mV and −5 mV (see Fig.…”

Section: Resultsmentioning

confidence: 72%

“…In addition to high sensitivity and linearity, excellent stability over a wide temperature range is also crucial for high performance Hall elements, and will significantly extend the application fields of Hall elements26. Figure 4a shows the output Hall voltage as a function of the magnetic field at a range of temperatures from 1.8 K to 400 K (the upper limit of our measurement instrument, see Methods section) and different bias currents.…”

Section: Resultsmentioning

confidence: 99%

“…The sensitivity is seen to increase, from 494 V/AT at 1.8 K, with increasing temperature and peak at about 580 V/AT at 350 K, and then decreases with temperature. The temperature coefficient of the sensitivity is defined as262728 where S denotes either the absolute sensitivity or the current/voltage-related sensitivity. The temperature coefficient γ T of the GHE operating in current mode remains below 800 ppm·K −1 over a wide temperature range from 1.8 K to 400 K (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Excellent thermal stability over a wide temperature range from 1.8 K to 400 K is crucial for many applications of high performance Hall elements in such fields as aircraft, spacecraft, military, oil and gas industries1232628. In a conventional semiconductor, carrier density and mobility are both temperature sensitive and the thermal stability of the corresponding Hall element is generally poor262728.…”

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Batch-fabricated high-performance graphene Hall elements

Zhi-yong

Shi

et al. 2013

Sci Rep

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Hall elements are by far the most widely used magnetic sensor. In general, the higher the mobility and the thinner the active region of the semiconductor used, the better the Hall device. While most common magnetic field sensors are Si-based Hall sensors, devices made from III-V compounds tend to favor over that based on Si. However these devices are more expensive and difficult to manufacture than Si, and hard to be integrated with signal-processing circuits for extending function and enforcing performance. In this article we show that graphene is intrinsically an ideal material for Hall elements which may harness the remarkable properties of graphene, i.e. extremely high carrier mobility and atomically thin active body, to create ideal magnetic sensors with high sensitivity, excellent linearity and remarkable thermal stability.

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Section: Resultsmentioning

confidence: 72%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Batch-fabricated high-performance graphene Hall elements

Zhi-yong

Shi

et al. 2013

Sci Rep

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“…extreme magnetoresistance | topological semimetal | orbital texture M aterials with large magnetoresistance (MR) have applications in electronics as magnetic memories (1,2), in spintronics as magnetic valves (3), and in industry as magnetic sensors or magnetic switches (4,5). Recent reports of extreme magnetoresistance (XMR) in several nonmagnetic semimetals have attracted attention due to its distinction from giant and collosal MR in magnetic semiconductors (2,6).…”

mentioning

confidence: 99%

Temperature−field phase diagram of extreme magnetoresistance

Tafti

Gibson

Kushwaha

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

103

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The recent discovery of extreme magnetoresistance (XMR) in LaSb introduced lanthanum monopnictides as a new platform to study this effect in the absence of broken inversion symmetry or protected linear band crossing. In this work, we report XMR in LaBi. Through a comparative study of magnetotransport effects in LaBi and LaSb, we construct a temperature−field phase diagram with triangular shape that illustrates how a magnetic field tunes the electronic behavior in these materials. We show that the triangular phase diagram can be generalized to other topological semimetals with different crystal structures and different chemical compositions. By comparing our experimental results to band structure calculations, we suggest that XMR in LaBi and LaSb originates from a combination of compensated electron−hole pockets and a particular orbital texture on the electron pocket. Such orbital texture is likely to be a generic feature of various topological semimetals, giving rise to their small residual resistivity at zero field and subject to strong scattering induced by a magnetic field.extreme magnetoresistance | topological semimetal | orbital texture M aterials with large magnetoresistance (MR) have applications in electronics as magnetic memories (1, 2), in spintronics as magnetic valves (3), and in industry as magnetic sensors or magnetic switches (4, 5). Recent reports of extreme magnetoresistance (XMR) in several nonmagnetic semimetals have attracted attention due to its distinction from giant and collosal MR in magnetic semiconductors (2, 6). XMR is observed in Dirac semimetals such as Na 3 Bi or Cd 3 As 2 (7, 8), Weyl semimetals such as NbP, NbAs, or TaAs (9-11), and layered semimetals such as WTe 2 , NbSb 2 , or PtSn 4 (12-16). The recent discovery of XMR in LaSb that does not belong to any of these categories shows that XMR is a ubiquitous phenomenon observed in seemingly unrelated materials (17). It also clearly underlines that the mechanism for XMR is not understood. The present article is a first attempt to unify the phenomenology of XMR in seemingly unrelated materials, to provide a common phase diagram for XMR, and to elucidate its underlying mechanism. We hope that this will enable theorists to develop a model capable of describing the underlying physics, once all of the salient experimental features are captured.We report the discovery of XMR in LaBi with similar crystal structure and chemical composition to LaSb. Fig. 1 shows the simple rock salt structure of lanthanum monopnictides. Through a comparative study of longitudinal and transverse magnetotransport in LaSb and LaBi, we construct a characteristic triangular T-H phase diagram for XMR in lanthanum monopnictides. Our band structure calculations, quantum oscillations, and Hall Effect measurements suggest that XMR is rooted in a combination of compensated electron−hole pockets and a mixed orbital texture within the electron pockets. The orbital texture is a result of lanthanum d states crossing the pnictogen p states. Spin−orbit coupling then opens a...

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On‐chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film

Zhang

Chen

et al. 2023

Adv Funct Materials

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Electrically integrable, high-sensitivity, and high-reliability magnetic sensors are not yet realized at high temperatures (500 °C). In this study, an integrated on-chip single-crystal diamond (SCD) micro-electromechanical system (MEMS) magnetic transducer is demonstrated by coupling SCD with a large magnetostrictive FeGa film. The FeGa film is multifunctionalized to actuate the resonator, self-sense the external magnetic field, and electrically readout the resonance signal. The on-chip SCD MEMS transducer shows a high sensitivity of 3.2 Hz mT −1 from room temperature to 500 °C and a low noise level of 9.45 nT Hz −1/2 up to 300 °C. The minimum fluctuation of the resonance frequency is 1.9 × 10 −6 at room temperature and 2.3 × 10 −6 at 300 °C. An SCD MEMS resonator array with parallel electric readout is subsequently achieved, thus providing a basis for the development of magnetic image sensors. The present study facilitates the development of highly integrated on-chip MEMS resonator transducers with high performance and high thermal stability.

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Hall Sensors for Extreme Temperatures

Cited by 45 publications

References 16 publications

Batch-fabricated high-performance graphene Hall elements

Batch-fabricated high-performance graphene Hall elements

Temperature−field phase diagram of extreme magnetoresistance

On‐chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film

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