Hall elements are by far the most widely used magnetic sensor. In general, the higher the mobility and the thinner the active region of the semiconductor used, the better the Hall device. While most common magnetic field sensors are Si-based Hall sensors, devices made from III-V compounds tend to favor over that based on Si. However these devices are more expensive and difficult to manufacture than Si, and hard to be integrated with signal-processing circuits for extending function and enforcing performance. In this article we show that graphene is intrinsically an ideal material for Hall elements which may harness the remarkable properties of graphene, i.e. extremely high carrier mobility and atomically thin active body, to create ideal magnetic sensors with high sensitivity, excellent linearity and remarkable thermal stability.

Scalable fabrication of high quality graphene devices is highly desired and important for the practical applications of graphene material. Graphene devices are massively fabricated on SiO2/Si substrate through an efficient process, which combines large scaled growth of monolayer graphene on Pt foil, modified bubbling transfer and photolithography-based device fabrication. These graphene devices present yield up to 86% (70 out of 81), field-effect mobility around 2500 cm2 V−1 S−1 and Dirac point voltage near to 0 V, as well as a narrow performance metrics distribution. In addition, as-fabricated graphene Hall elements through this process exhibit high current sensitivity typically up to 1200 V/AT.