Hall coefficient in vacuum-deposited copper films

Low resistive copper films deposited using the ion beam sputtering method with an ultra-high purity target

“…Thus, the apparent plasmon resonance frequency (or the wavelength of incident light λ p = c/ω p ) of bulk copper appears at λ p = 590 nm, shifted from 115 to 172 nm (assuming an effective mass of 1.0m 0 -1.5m 0 ) [23,27]. Equation (3) indicates that λ p is not invariable against τ , although the extent of the variation is small due to ω 2 p ε b 1/τ 2 . The classical size effect which follows the Fuchs-Sondheimer model is represented as…”

“…Copper is often employed as the metallization material in MEMS likewise in advanced integrated circuits because of its higher resistance to failure by electro-and stress-migration, as well as its large conductivity and plentiful supplement for noble metals. The volume resistivity of bulk copper at room temperature is 1.7 × 10 −8 m, whereas that of film and wire is nearly twice that value [3,4]. The origin of the resistivity is represented as additions of scattering processes of conduction electrons by phonons, impurities (O, S, P and Fe atoms) [5,6], vacancies, grain boundaries of polycrystalline film [7] and surface roughness [8], known as Matthiessen's rule [9].…”

Variations comparées de différentes propriétés électriques de couches minces métalliques avec leur épaisseur

“…1. Introduetion.2013 De nombreux travaux théoriques et expérimentaux [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] ont été consacrés à l'étude. des phénomènes de conduction électronique dans les couches minces métalliques placées dans un champ électrique E et dans un champ magnétique H.…”

Size Effects in Galvanomagnetic Properties

“…model or the bi-dimensional model. Among the experimental result related to the variations in the Hall coefficient with the thickness, only a few papers [refs 20,22,24,25,[29][30][31]. …”