Variations comparées de différentes propriétés électriques de couches minces métalliques avec leur épaisseur

Tellier, C. R.; Tosser, A. J.

doi:10.1051/rphysap:01978001309044100

Cited by 13 publications

(2 citation statements)

References 32 publications

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“…We have previously shown 14 that in the case of a low magnetic field (commonly the case observed in experimental works 1'2,s,8,1 o,12), the Hall coefficient RH of thin metallic films in the presence of a transverse magnetic field can be represented as the product of the film resistivity pF and its temperature coefficient…”

Section: The Temperature Dependence Of the Hall Coefficient In The F-mentioning

confidence: 91%

Temperature Dependence of the Hall Coefficient of Thin Films

Tellier¹,

Pichard²,

Tosser³

1979

Active and Passive Electronic Components

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A theoretical expression for the temperature coefficientβRHof the Hall coefficientRHFof metallic films is deduced from the Fuchs–Sondheimer conduction model. The general expression takes into account the deviation introduced by the geometrical limitation of the mean free path. This is negligible for relatively thick films (k≥ 1 forp= 0) and agrees with experiments previously reported by other authors.

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Section: The Temperature Dependence Of the Hall Coefficient In The F-mentioning

confidence: 91%

Temperature Dependence of the Hall Coefficient of Thin Films

Tellier¹,

Pichard²,

Tosser³

1979

Active and Passive Electronic Components

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“…We have previously shown 16 that in the case of transverse magnetic field the Hall coefficient of thin metallic R,F can be expressed in terms of film resistivity PF and its t.c.r. F" RHF/RHo (PF'F)/(RO "flO) 6where RHO is the Hall coefficient in bulk material.…”

mentioning

confidence: 99%

Size Effects in the Thermal Variations of the Hall Coefficient

Pichard¹,

Tellier²,

Tosser³

1981

Active and Passive Electronic Components

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Simple analytical expression for the hall coefficient of polycrystalline metal films at low magnetic field

Pichard¹,

Tellier

Tosser³

1981

Phys. Stat. Sol. (a)

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Theoretical aspects films in the Mayadas-Shatzkes model /1/ (M-S model), and the Fuchs-Sondheimer model (F-S model) /2/ have shown /3/ that the M-S model can reduce to an effective F-S model, provided the electrical parameters of the bulk material be replaced by those of the infinitely thick polycrystalline film; this effective model can be theoretically based on an effective mean free path model Theoretical calculations of the conductivity of thin metal /4/. In the F-S conduction model /2, 5/ the general expression for the transverse Hall coefficient RHFs has been calculated /6/ with the aid of the Cottey model /7/. For low magnetic field, RI.,Fs can be expressed /8, 9 / by the following relation: 1 where Q~~ is the film resistivity and suming that the film is unsupported and neglecting any thermal variation except in the electronic mean free path; the index o marks the bulk parameters.BFSu its temperature coefficient, as-It must be noted that the introduction of an effective mean free path for representing both the effects of background and grain-boundary scatterings (i.e. the scatterings which occur in an infinitely thick polycrystalline film) is compatible with the procedure used for solving the Boltzmann transport equation /1 O/ since the conditions of validity for Sondheimer calculations /lo, 11/ a r e not altered.The effective form deduced from (1) is then 1) C

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Variations comparées de différentes propriétés électriques de couches minces métalliques avec leur épaisseur

Cited by 13 publications

References 32 publications

Temperature Dependence of the Hall Coefficient of Thin Films

Temperature Dependence of the Hall Coefficient of Thin Films

Size Effects in the Thermal Variations of the Hall Coefficient

Simple analytical expression for the hall coefficient of polycrystalline metal films at low magnetic field

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