Hafnium oxide layers derived by photo-assisted sol–gel processing

Correlation between the method of preparation and the properties of the sol–gel HfO2 thin films

“…Several techniques have been taken into consideration for the preparation of HfO 2 films for COMOS devices, including atomic layer deposition (ALD) [10][11][12][13][14][15][16][17], photo-assisted layer deposition [18], evaporation with ion assisted deposition, sputtering [19][20][21][22], chemical vapor deposition, metalorganic chemical vapor deposition (MOCVD) [23] standard thermal evaporation [24] and molecular beam epitaxy (MBE) [9]. All these techniques require high temperature treatments which usually induce a deterioration of the device performance and reliability.…”

Water effect in the synthesis of nanostructured thin films of HfO2 deposited by the ultrasonic spray pyrolysis technique

“…6a. The films deposited at 400 and 450 • C present broadband centered approximately at 3400 cm −1 due to O-H type bonds [36,37]. This same band appears slightly on those films deposited at 500 and 550 • C. The bands located at 1510 and 1410 cm −1 correspond to vibrational modes of the asymmetric stretching of carbonyl CO(vas).…”

Zr(IV) and Hf(IV) β-diketonate complexes as precursors for the photochemical deposition of ZrO2 and HfO2 thin films

“…The main peak located at 530.7 eV is attributed to hafnium dioxide at the surface [32]. The peak at 531.8 is suggested to correspond to physisorbed water or -OH groups [17,33], and the peak at 533.8 may be attributed to C-O bonds [32]. After thermal treatment at 500°C, it can be seen that the peak located at 533.8 eV disappeared, but the physisorbed water or -OH still existed at the surface of the films, and the intensity decreased very rapidly.…”

“…In turn, these parameters are controlled by synthesis conditions. Photo-assisted processes have received some attention in recent years, for the deposition of HfO 2 and ZrO 2 films, and have been applied in CVD [14,15] and sol-gel [16,17] methods.…”