Abstract:HfO2 thin films are proposed as high-k gate dielectric, especially for the fabrication of ultra-large-scale integration systems. The effect of adding deionized water during the synthesis of HfO2 thin films on its structural and dielectric properties is reported. The study of nanostructured HfO2 thin films deposited on crystalline silicon wafers is made by applying the ultrasonic spray pyrolysis (USP) technique. For the synthesis of hafnium oxide thin films, hafnium acetylacetonate was dissolved in dimethylform… Show more
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