Self‐assembled InAs quantum dots encapsulated by Gax In1–x Ny As1–y (GINA) have been grown on GaAs (001) substrate by solid source molecular beam epitaxy. A wavelength of up to 1.52 µm is achieved for as‐grown samples with y = 1.7%. The growth temperature of the GINA cap layer and the ex‐situ annealing temperature are optimized in order to get the best photoluminescence characteristics. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)