Growth-temperature-dependent (self-)annealing-induced blueshift of photoluminescence from 1.3 μm GaInNAs/GaAs quantum wells

Abstract

Articles you may be interested inGaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μ m Appl. Phys. Lett. 91, 051102 (2007); 10.1063/1.2767185 Role of N ions in the optical and morphological properties of InGaAsN quantum wells for 1.3 -1.5 μ m applications Appl. Phys. Lett. 85, 1940 (2004); 10.1063/1.1790591 GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm Appl. Phys. Lett. 82, 1845 (2003); 10.1063/1.1563062Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature

1.5 µm luminescence from InAs/GaxIn1–xNyAs1–y quantum dots grown on GaAs substrate

“…The GINA bandgap blue-shift due to annealing decreases when the GINA growth temperature increases. This phenomenon was already observed and analysed for GINA/GaAs quantum wells [7,8]. There is no strong variation of the PL intensity for the as-grown samples ( Fig.…”

“…the samples grown at the lowest temperatures [7,8]. The PL peak intensity is maximum in the 640-690°C range for all samples ( Fig.…”

Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

“…When the As valve position was set to 300 mils, corresponding to the V/III BEP of 14, PL blueshifted by about 25 nm, indicating that there was a change in layer structure or composition during sample growth. Poor optical properties of as-grown dilute nitrides in general can be improved by thermal annealing which, however, causes an undesired blue-shift [18]. Fig.…”

“…The sample grown with V=III BEP ¼ 6 shows no significant change in the shape or position of the QW-related XRD feature after annealing. This suggests that the blue-shift is mainly due to a formation of In-N bonds [18,20]. Instead, the samples with the larger V/ III BEP ratios show a small, but discernable, systematic shift of the QW-related XRD feature towards the substrate peak (y ¼ 01), as the arsenic pressure is increased.…”

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

“…As reported in [5] during the MOCVD process the emission peak corresponding to the dilute nitride junction is slightly shifted towards shorter wavelengths and this explains at least in part the reduced J sc . Such behavior is rather typical for dilute nitride heterostructures experiencing thermal annealing [9][10][11][12][13]. The EQEs of dilute nitride junction before and after MOCVD overgrowth are shown in Fig.…”