1.5 µm luminescence from InAs/Ga_xIn_1–xN_yAs_1–y quantum dots grown on GaAs substrate

Abstract

Self‐assembled InAs quantum dots encapsulated by Gax In1–x Ny As1–y (GINA) have been grown on GaAs (001) substrate by solid source molecular beam epitaxy. A wavelength of up to 1.52 µm is achieved for as‐grown samples with y = 1.7%. The growth temperature of the GINA cap layer and the ex‐situ annealing temperature are optimized in order to get the best photoluminescence characteristics. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)