Growth-Temperature Dependence of the Quality of Al2O3 Prepared by Sequential Surface Chemical Reaction of Trimethylaluminum and H2O2

Fan, Jia Fa; Toyoda, K.

doi:10.1143/jjap.32.l1349

Cited by 11 publications

(1 citation statement)

References 7 publications

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“…7 In microelectronics new high-k dielectric oxide materials to replace silicon dioxide have been extensively studied. 8,9 Aluminum oxide has good electrical properties such as wide bandgap ͑8.7 eV͒ and high electric field strength ͑8 MV/cm͒. The dielectric constant, however ͑k = 9͒, is only double to SiO 2 .…”

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confidence: 99%

Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition

Niskanen¹,

Arstila

Ritala³

et al. 2005

J. Electrochem. Soc.

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Aluminum oxide was deposited by radical enhanced atomic layer deposition using trimethylaluminum ͑TMA͒ and oxygen radicals in the temperature range 25-300°C. The radicals were produced by dissociating oxygen gas in a remote microwave plasma discharge. Oxygen was mixed with argon which was also used as the carrier and purge gas. Films were grown on silicon, glass, and indium tin oxide coated glass substrates. Additional growth experiments were conducted on heat-sensitive materials: polyethene, polypropene, and wool. The time to complete one deposition cycle was nearly independent of the deposition temperature, being around 10 s for all deposition temperatures. Growth rates were between 1.5 and 2.9 Å per cycle, which is higher than what has been obtained with the TMA-H 2 O process in similar reactor conditions. The films were amorphous according to X-ray diffraction. The films were also very smooth; the surface root-mean-square roughness was less than 0.8 nm for 180 nm thick films. The films had breakdown fields, defined as the field corresponding to the leakage current density of 1 A/cm 2 , between 6 and 10 MV/cm, and dielectric constants between 6.5 and 8.1. The film impurity levels according to time-of-flight elastic recoil detection analysis were between 0.8 and 15 atom % for hydrogen and 0.2 and 4 atom % for carbon. The refractive indexes at 580 nm were between 1.60 and 1.64.

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confidence: 99%

Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition

Niskanen¹,

Arstila

Ritala³

et al. 2005

J. Electrochem. Soc.

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Determination of P/Al ratio in phosphorus-doped aluminium oxide thin films by XRF, RBS and FTIR

1995

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Abstract. Phosphorus-doped aluminium oxide thin films were deposited in a flow-type ALE reactor from A1C13, H20 and from either P205 or trimethylphosphate. Structural information of the films was obtained from Fourier transform infrared (FTIR) spectra. Rutherford backscattering spectroscopy (RBS) was used to quantitatively determine the composition of the films. The P/A1 intensity ratios calculated from X-ray fluorescence (XRF) results were in a linear relation with the P/A1 concentration ratios calculated from RBS results. For comparison, the intensity ratios of the phosphorus peak (P = O) at about 1250 cm-1 and the aluminium peak (A1-O) at about 950 cm-1 were determined from the IR absorption spectra. The calibration of FTIR peak intensities was done by plotting the intensity ratios of phosphorus and aluminium peaks against the P/A1 concentration ratios measured by RBS. FTIR gave also a linear calibration curve with RBS but the method is less suitable for routine analysis of P/A1 ratio than XRF.Key words: aluminium oxide, phosphorus, XRF, RBS, FTIR.In the atomic layer epitaxy (ALE) method the thin film is deposited one atomic layer at a time allowing a self-controlled growth obtained through surface saturating reactions [1]. The source materials are alternately pulsed into the reactor chamber and between the reactant doses an inert gas purge pulse is used to remove the excess of reactant and gaseous side-products. ALE process has mainly been used to grow compound thin films, such as II-VI and III-V semiconductors and oxides [2]. The self-controlled growth allows the deposition of uniform thin films not only on flat surfaces but on porous, heterogeneous surfaces, too [3]. This makes the ALE technique also an interesting method for the manufacture of catalysts.Thin films of A120 3 are extensively used for a variety of applications because of their desirable properties such as high transparency, good electrical insulating

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The effect of anodizing temperature on anodic oxide formed on pure Al thin films

1995

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Growth-Temperature Dependence of the Quality of Al₂O₃ Prepared by Sequential Surface Chemical Reaction of Trimethylaluminum and H₂O₂

Cited by 11 publications

References 7 publications

Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition

Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition

Determination of P/Al ratio in phosphorus-doped aluminium oxide thin films by XRF, RBS and FTIR

The effect of anodizing temperature on anodic oxide formed on pure Al thin films

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