The structure of the barrier‐type anodic oxide formed on preannealed Al‐1 weight percent
false(normalw/normalofalse)
normalSi−0.5 normalw/normalo
Cu thin film in a tartaric acid electrolyte was investigated. The oxide film is basically an amorphous layer with a thin dispersed
γ′‐Al2O3
crystalline layer interposed in the center. Pores are observed to be associated with the
γ′‐Al2O3
layer. Silicon nodules and
Al2normalCu
particles originally present in the
normalAl−1 normalw/normalo
normalSi−0.5 normalw/normalo
Cu film behave differently during anodization. Silicon nodules are oxidized to various degree during anodizing. The silica formed in the Si nodules is amorphous and somewhat porous possibly due to oxygen evolution associated with the Si anodization. A dark rim was found to surround each nodule in the anodic oxide film. This rim is shown to be thicker amorphous
Al2O3
material, and its origin is attributed to the faster oxidation rate in the vicinity of Si nodules.
Al2normalCu
precipitates are oxidized to form
Al2O3
at about the same rate as the surrounding Al matrix. Copper is rejected by
Al2O3
and accumulates at the
Al2O3/normalAl
interface.
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