Growth, structural and mechanical properties of magnetron-sputtered ZrN/SiNx nanolaminated coatings

Abadias, G.; Углов, В.В.; Saladukhin, I.A.; Zlotski, S.V.; Tolmachova, G.N.; Dub, S. N.; Vuuren, A. Janse van

doi:10.1016/j.surfcoat.2016.06.099

Cited by 37 publications

(26 citation statements)

References 59 publications

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“…Seo et al [3] reported a high hardness value of 25.2 GPa for epitaxial HfN(001) layers. As Si was introduced successively into the coatings, the hardness varied: the Hf48Si3N49 coatings had a hardness of 22.5 ± 0.8 GPa, whereas the hardness decreased sharply to 15.3 ± 0.6 GPa for the Hf46Si7N48 coatings and then remained at 15-16 GPa for the Hf39Si12N49, Hf36Si13N51 and Hf32Si19N49 coatings; this level is close to 17-19 GPa for Si3N4 [31][32][33][34]. The bonding characteristics of three typical Hf-Si-N coatings, a crystalline and amorphous mixed Hf48Si3N49, an X-ray amorphous dominated Hf45Si7N48 and an X-ray amorphous Hf32Si19N49 coatings, respectively representing low-, medium-and high-Si-contents Hf-Si-N coatings, were analyzed.…”

Section: Multilayered Hf-si-n Coatingsmentioning

confidence: 84%

Mechanical Properties and Oxidation Behavior of Multilayered Hf–Si–N Coatings

2018

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Monolithic Hf-Si-N coatings and multilayered Hf-Si-N coatings with cyclical gradient concentration were fabricated using reactive direct current magnetron cosputtering. The structure of the Hf-Si-N coatings varied from a crystalline HfN phase, to a mixture of HfN and amorphous phases and to an amorphous phase with continuously increasing the Si content. The multilayered Hf 48 Si 3 N 49 coatings exhibited a mixture of face-centered cubic and near-amorphous phases with a maximal hardness of 22.5 GPa, a Young's modulus of 244 GPa and a residual stress of −1.5 GPa. The crystalline phase-dominant coatings exhibited a linear relationship between the hardness and compressive residual stress, whereas the amorphous phase-dominant coatings exhibited a low hardness level of 15-16 GPa; this hardness is close to that of Si 3 N 4 . Various oxides were formed after annealing of the Hf-Si-N coatings at 600 • C in a 1% O 2 -99% Ar atmosphere. Monoclinic HfO 2 formed after Hf 54 N 46 annealing and amorphous oxide formed for the oxidation-resistant Hf 32 Si 19 N 49 coatings. The oxidation behavior with respect to the Si content was investigated by using transmission electron microscopy and X-ray photoelectron spectroscopy.

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Section: Multilayered Hf-si-n Coatingsmentioning

confidence: 84%

Mechanical Properties and Oxidation Behavior of Multilayered Hf–Si–N Coatings

2018

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“…One can also notice from the results in Figure 3 that the stress state is reproducible from one bilayer to another, i.e., there is no influence of the underneath layers on the cumulative stress build-up. The formation of compressive stress in sputter-deposited TMN layers is due to energetic bombardment during growth, which creates point defects in the crystal lattice and densify the grain boundaries [23,[35][36][37]. At low deposited energy, sputter-deposited MeN x films develop a columnar, underdense microstructure, often accompanied by the development of tensile stress [35,37,38].…”

Section: Resultsmentioning

confidence: 99%

“…The periodic growth of the multilayered systems was Coatings 2020, 10, 149 4 of 17 monitored by computer-controlled pneumatic shutters located at 2 cm in front of each target. Details of the multilayered films growth procedure are given in [23]. The deposition conditions are summarized in Table 1 for the reference monolithic films, and the same conditions were used for elementary layers of the MeN/SiN x (Me = Zr, Cr, Al) multilayers, except the deposition time.…”

Section: Methodsmentioning

confidence: 99%

“…A significant increase in hardness of the MeN/SiN x multilayered films has been reported when decreasing the thickness of SiN x layer below~0.8 nm [23][24][25]. In this case, the epitaxial growth of silicon nitride at the interface of cubic MeN layer results in SiN x layer crystallization.…”

Section: Introductionmentioning

confidence: 99%

“…MeN/SiN x coatings are among the most appealing nanocrystalline/amorphous layered systems [18][19][20][21]. The characteristic feature of these films is the immiscibility of their constitutive layers at the origin of their good thermal stability and properties [20,22,23]. The enhanced stability of MeN/SiN x films to oxidation is also related to the fact that the columnar growth of MeN layer is suppressed by the presence of the SiN x amorphous layer [21].…”

Section: Introductionmentioning

confidence: 99%

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Structural Properties and Oxidation Resistance of ZrN/SiNx, CrN/SiNx and AlN/SiNx Multilayered Films Deposited by Magnetron Sputtering Technique

et al. 2020

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In the present work, the structure, stress state and phase composition of MeN/SiNx (Me = Zr, Cr, Al) multilayered films with the thickness of elementary layers in nanoscale range, as well as their stability to high temperature oxidation, were studied. Monolithic (reference) and multilayered films were deposited on Si substrates at the temperatures of 300 °C (ZrN/SiNx and AlN/SiNx systems) or 450 °C (CrN/SiNx) by reactive magnetron sputtering. The thickness ratios of MeN to SiNx were 5 nm/2 nm, 5 nm/5 nm, 5 nm/10 nm and 2 nm/5 nm. Transmission electron microscopy (TEM), X-ray Reflectivity (XRR) and X-ray Diffraction (XRD) testified to the uniform alternation of MeN and SiNx layers with sharp interlayer boundaries. It was observed that MeN sublayers have a nanocrystalline structure with (001) preferred orientation at 5 nm, but are X-ray amorphous at 2 nm, while SiNx sublayers are always X-ray amorphous. The stability of the coatings to oxidation was investigated by in situ XRD analysis (at the temperature range of 400–950 °C) along with the methods of wavelength-dispersive X-ray spectroscopy (WDS) and scanning electron microscopy (SEM) after air annealing procedure. Reference ZrN and CrN films started to oxidize at the temperatures of 550 and 700 °C, respectively, while the AlN reference film was thermally stable up to 950 °C. Compared to reference monolithic films, MeN/SiNx multilayers have an improved oxidation resistance (onset of oxidation is shifted by more than 200 °C), and the performance is enhanced with increasing fraction of SiNx layer thickness. Overall, CrN/SiNx and AlN/SiNx multilayered films are characterized by noticeably higher resistance to oxidation as compared to ZrN/SiNx multilayers, the best performance being obtained for CrN/SiNx and AlN/SiNx with 5 nm/5 nm and 5 nm/10 nm periods, which remain stable at least up to 950 °C.

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