Growth rate of silicon nanowires

Kikkawa, Jun; Ohno, Yutaka; Takeda, Seiji

doi:10.1063/1.1888034

Cited by 131 publications

(113 citation statements)

References 18 publications

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“…The apex angle is determined by the relative rates of radial and axial growth, as illustrated in Figure 3d. The selective influence of catalyst nanoparticle size on axial growth rate as reported for nanowires 10 likely plays a significant role in the controlled variation of apex angles. We hope that this work will generate further interest in and enable more detailed investigations of the shape-and structure-dependent properties of semiconductor nanocones.…”

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confidence: 83%

Diamond-Hexagonal Semiconductor Nanocones with Controllable Apex Angle

Cao

Laim

et al. 2005

J. Am. Chem. Soc.

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Control of nanocrystal topology and of the formation of selected polymorphs is an important feature for fundamental studies of crystal growth and for investigating the shape and structural dependence of many properties. 1 Such control is also critical in developing new pathways for materials synthesis 2 and new applications of nanostructured materials. 3 Conical nanostructures of carbon, 4a BN, 4b AlN, 4c SiC, 4d ZnO, 4e and Si 4f-g have attracted interest recently because of their potential uses in field emission, in nanoscaled manipulation, and as scanning probe microscopy and near-field scanning optical microscopy probes. Tapered nanostructures are expected to have higher bending stiffness than nanotubes and nanowires and better resistance to thermal-induced drift than nanowires. 5 Shape engineering of properties represents an important design flexibility for these and other applications. 6 Silicon-based nanostructures produced by bottom-up methods are highly attractive as key elements in emerging nanoelectronic device technologies due to performance superior to current topdown fabricated Si-based commercial devices and its cost-effectiveness for developing large-scaled electronic circuits. 7 Despite the number of polymorphs in bulk Si, nanostructured silicon materials produced by bottom-up methods have been limited to the diamondcubic (DC) structure. 8 Here, we report the metal-catalyzed chemical vapor deposition synthesis of Si and Ge solid nanocones (SiNCs, GeNCs) with control of apex angles. Significantly, we also find that the structure of the SiNCs is not the conventional DC phase, but rather diamond-hexagonal (DH).Evaporated and annealed 2 nm thick Au films or 2-30 nm diameter Au colloids (Ted Pella) cast on poly-L-lysine-functionalized SiO 2 -coated Si(100) substrates were exposed to flowing precursor of 10% SiH 4 in He, ∼20-200 sccm (10% GeH 4 in He, ∼50 sccm), and carrier gas of N 2 or 5% H 2 in Ar, ∼100 sccm (∼50 sccm) at 650°C (400°C) under ∼20 Torr (∼400 Torr) for synthesis of SiNCs (GeNCs) in a quartz tube furnace for 5-150 min. The resulting SiNCs and GeNCs were characterized by scanning electron microscopy (SEM, FEI-XL30), energy-dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM, JEOL 2010F), and Raman scattering spectroscopy (Renishaw 1000). TEM samples were prepared by sonicating the SiNCs and GeNCs from growth substrates in ethanol and dropping onto Ni or Cu TEM grids. Figure 1a shows an SEM image of a representative yield of SiNCs; the insets show a TEM image of a SiNC tip with a catalyst particle (upper) and an SEM of the hexagonal cross-section of a SiNC (lower). The SiNCs shown are ∼10 µm long, ∼2 µm wide at the base, and the typical tip radius r tip of the SiNC is ∼5 nm, though some possess catalyst-free tips with r tip ≈ 1-2 nm (not shown). Similar results were obtained with GeNCs (see Supporting Information). EDS analysis performed in TEM and SEM (not shown) confirms that each SiNC consists of Si throughout the structure. In addition, the SiNCs possess a re...

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confidence: 83%

Diamond-Hexagonal Semiconductor Nanocones with Controllable Apex Angle

Cao

Laim

et al. 2005

J. Am. Chem. Soc.

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“…Considering the Gibbs-Thompson common framework for VLS growth, the growth rate becomes diameter (d) dependent, [45][46][47] …”

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confidence: 99%

Manipulating the Growth Kinetics of Vapor–Liquid–Solid Propagated Ge Nanowires

et al. 2013

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“…The improvement in growth could be due to heating of the substrate by a current induced by the repeated striking of the plasma. It has been shown that the growth rate of silicon nanowires improves with increasing temperature [12]. The slight heating of the substrate by a repeatedly induced current would increase the temperature of the centre of the substrate to conditions more favourable to nanowire growth.…”

Section: Discussionmentioning

confidence: 99%

Pulsed PECVD for the Growth of Silicon Nanowires

Parlevliet

Cornish

2006

2006 International Conference on Nanoscience and Nanotechnology

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Silicon nanowires of high density and high aspect ratio similar to those shown in the literature [1, 2] have been grown using a variation of Plasma Enhanced Chemical Vapour Deposition (PECVD) known as Pulsed Plasma Enhanced Chemical Vapour Deposition (PPECVD) using a range of different modulation frequencies. For the range of frequencies used it was found that the presence of a modulated silane plasma increases the average density and sample coverage of silicon nanowires. Both of these effects are proposed as being due to the increase in the number of times the plasma is struck and turned off during the deposition process. For low temperature growth of silicon nanowires the presence of a pulsed silane plasma improves the density and sample coverage of silicon nanowires.

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Growth rate of silicon nanowires

Cited by 131 publications

References 18 publications

Diamond-Hexagonal Semiconductor Nanocones with Controllable Apex Angle

Diamond-Hexagonal Semiconductor Nanocones with Controllable Apex Angle

Manipulating the Growth Kinetics of Vapor–Liquid–Solid Propagated Ge Nanowires

Pulsed PECVD for the Growth of Silicon Nanowires

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