Manipulating the Growth Kinetics of Vapor–Liquid–Solid Propagated Ge Nanowires

Abstract

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Visualising discrete structural transformations in germanium nanowires during ion beam irradiation and subsequent annealing

“…The concurrent implantation/imaging steps were repeated multiple times to build up the step-wise increase in the dose. The maximum implantation dose in our studies was 1.14×10 14 ions cm -2 which corresponds to 6 successive steps. Ion beam simulations in Ge nanowires were done by using iradina code.…”

“…14 The carrier chip platform used for step-wise implantation/imaging of one and the same nanowire is depicted schematically in Supplementary, Fig. S1.…”

Diameter-Controlled Germanium Nanowires with Lamellar Twinning and Polytypes

“…[1][2][3][4][5][6][7][8] The integration of semiconductor nanowires into device geometries 9 requires control over their morphology, dimensions, growth orientation, crystal phase and structural defects. Catalytic bottom-up approaches, such as vapor-liquid-solid (VLS) [10][11][12] , vapor-solid-solid (VSS) [13][14] , supercritical fluid-liquid-solid (SFLS) [15][16][17] techniques, are popular routes for growing high-aspect ratio one-dimensional nanostructures [18][19] , where nanowire diameters can be controlled by the dimension of the catalysts. 20 Control over nanowire diameters, in turn, facilitates regulation over their growth orientation.…”

Size-controlled growth of germanium nanowires from ternary eutectic alloy catalysts

“…For the Au-Ge binary alloy system, Ag is a preferred choice as a foreign element as it is completely miscible with Au, does not form intermetallic compounds and the bimetallic system of AuxAg1-x forms a low temperature eutectic with Ge. Biswas et al 12,13 and Chou et al 14 have employed Ag in Au-Ge eutectic systems to synthesise Ge nanowires. In particular, Biswas et al used Ag to successfully lower Ceq of Ge in a Au-Ge system to produce millimetre-long Ge nanowires 13 .…”

“…Biswas et al 12,13 and Chou et al 14 have employed Ag in Au-Ge eutectic systems to synthesise Ge nanowires. In particular, Biswas et al used Ag to successfully lower Ceq of Ge in a Au-Ge system to produce millimetre-long Ge nanowires 13 . Another bi-metallic catalyst system which has been used to seed nanowire growth is Au-Al (specifically, AuAl2 seeds) 15 .…”