Pulsed PECVD for the Growth of Silicon Nanowires

Parlevliet, David; Cornish, J.C.L.

doi:10.1109/iconn.2006.340543

Cited by 4 publications

(5 citation statements)

References 12 publications

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“…From Figure 1b it can be seen that the conductive ITO coated materials, both Corning glass and Asahi ITO produce nanowires at a higher density than the uncoated corning glass of similar thickness. Previous work using PPECVD has indicated that part of the increase in density with using a 1kHz pulsed plasma is due to the induced heating in the substrate 3 . By introducing a conductive layer to the surface of the otherwise insulating glass substrate before the deposition of the gold catalyst layer this effect could be enhanced.…”

Section: Discussionmentioning

confidence: 99%

“…A further modification of PECVD uses a square wave signal to produce Pulsed PECVD (PPECVD). We have previously shown 3 that the use of PPECVD improves nanowire density and overall sample coverage in comparison to PECVD. Silicon nanowires have been produced using a variety of substrates, although most interest is devoted to what is being grown, the substrate used can affect the ultimate usefulness of the silicon nanowires.…”

Section: Introductionmentioning

confidence: 99%

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Pulsed PECVD Growth of Silicon Nanowires on Various Substrates

Parlevliet

Cornish

2007

MRS Proc.

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Silicon nanowires with high aspect ratio were grown using PPECVD and a gold catalyst on a variety of different substrates. The morphology of the nanowires was investigated for a range of crystalline silicon, glass, metal, ITO coated and amorphous silicon coated glass substrates. Deposition of the nanowires was carried out in a parallel plate PECVD chamber modified for PPECVD using a 1kHz square wave to modulate the 13.56MHz RF signal. Samples were analyzed using either a Phillips XL20 SEM of a ZEISS 1555 VP FESEM. The average diameter of the nanowires was found to be independent of the substrate used. The silicon nanowires would grow on all of the substrates tested, however the density varied greatly. It was found that nanowires grew with higher density on the ITO coated glass substrates rather than the uncoated glass substrates. Aligned nanowire growth was observed on polished copper substrates. Of all the substrates trialed, ITO coated aluminosilicate glass proved to be the most effective substrate for the growth of silicon nanowires.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Pulsed PECVD Growth of Silicon Nanowires on Various Substrates

Parlevliet

Cornish

2007

MRS Proc.

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“…PECVD has been improved to pulsed PECVD (PPECVD) which uses modulated plasma to support the deposition process. Parlevliet and Cornish [34,35] group have shown that PPECVD technique could be produced Si nanowires at higher area density more than normal PECVD. The PPECVD grows Si nanowires using metal catalysts like Al, Ag, Cu, Au, Sn and In.…”

Section: Catalyst-assisted Growth Technologiesmentioning

confidence: 99%

“…The PPECVD grows Si nanowires using metal catalysts like Al, Ag, Cu, Au, Sn and In. According to the results of Parlevliet and Cornish [34,35] group, the Ag was the best effective catalysts under conditions of growth temperatures, and also Ag catalysts could be produced Si nanowires with substrate coverage of seven to eight times greater than the other catalysts.…”

Section: Catalyst-assisted Growth Technologiesmentioning

confidence: 99%

A new factor for fabrication technologies evaluation for silicon nanowire transistors

Hashim

Shakib

2020

TELKOMNIKA

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This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays. This research provides a good comparison among fabrication technologies of SiNWTs depending on a new factor DIF, this factor depends on the size of channel and power consumption in channel. As a result of this comparison, the best technology to use in the future to fabricate silicon nano transistors for future ICs is AFM nanolithography.

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“…A modification of PECVD is pulsed PECVD which uses a modulated plasma to aid the deposition process. We have previously shown [3] that PPECVD can be used to produce silicon nanowires with a greater area density than conventional PECVD. In the VLS mechanism the role of the catalyst is to encourage the growth of single crystal silicon nanowires.…”

Section: Introductionmentioning

confidence: 99%

Silicon Nanowires: Growth Studies Using Pulsed PECVD

Parlevliet

Cornish

2007

MRS Proc.

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Silicon nanowires with high aspect ratios have been grown at high density using a variation of Plasma Enhanced Chemical Deposition (PECVD) known as Pulsed PECVD (PPECVD). Growth rate and morphology were investigated for a range of catalysts: gold, silver, aluminum, copper, indium and tin. The thickness of the catalyst layer was 100nm. Deposition was carried out in a parallel plate PECVD chamber at substrate temperatures up to 350°C, from undiluted semiconductor grade Silane. A 1 kHz square wave was used to modulate the 13.56 MHz RF power. Samples were analyzed using either a Phillips XL20 SEM or a ZEISS 1555 VP FESEM. The average diameter for nanowires grown using a gold catalyst layer was 150nm and the average length was 4µm although some nanowires were observed with lengths up to 20µm. Back-scattered-electron images clearly show gold present at the tips of the silicon nanowires grown using gold as a catalyst, confirming their growth by the vapor liquid solid (VLS) mechanism. Sporadic growth of nanowires was detected when using copper as a catalyst. Although gold performed best as catalyst for nanowire growth it was, however, closely followed by tin. The other catalysts produced nanowires with properties between these extremes.

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Pulsed PECVD for the Growth of Silicon Nanowires

Cited by 4 publications

References 12 publications

Pulsed PECVD Growth of Silicon Nanowires on Various Substrates

Pulsed PECVD Growth of Silicon Nanowires on Various Substrates

A new factor for fabrication technologies evaluation for silicon nanowire transistors

Silicon Nanowires: Growth Studies Using Pulsed PECVD

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