Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy

Keen, B.; Makin, Robert A.; Stampe, P. A.; Kennedy, R. J.; Sallis, Shawn; Piper, Louis F. J.; McCombe, B. D.; Durbin, Steven M.

doi:10.1007/s11664-014-3006-8

Cited by 11 publications

(12 citation statements)

References 22 publications

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“…30−32 This class of materials and their derivatives would also provide novel platforms for other applications more generally. 28,33,34 Remarkably, we find an energy gap as large as 773 meV (or 855 meV) in TlBi films hydrogenated on one (or both) side. Moreover, by using TlBi as an exemplar system, we demonstrate that III−V films remain topologically nontrivial with a large band gap for various hydrogenation levels.…”

mentioning

confidence: 57%

“…We predict QSH phases in both pristine and hydrogenated GaBi, InBi, TlBi, and TlSb, while TlAs and TlN exhibit a nontrivial phase only when the film is not hydrogenated. These films support a single Dirac cone edge state band for armchair edges with the Dirac point located in the middle of the 2D bulk gap, which is highly desirable for spin-transport applications. − This class of materials and their derivatives would also provide novel platforms for other applications more generally. ,, …”

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confidence: 99%

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Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III–V Buckled Honeycombs

et al. 2015

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A large gap two-dimensional (2D) topological insulator (TI), also known as a quantum spin Hall (QSH) insulator, is highly desirable for low-power-consuming electronic devices owing to its spin-polarized backscattering-free edge conducting channels. Although many freestanding films have been predicted to harbor the QSH phase, band topology of a film can be modified substantially when it is placed or grown on a substrate, making the materials realization of a 2D TI challenging. Here we report a first-principles study of possible QSH phases in 75 binary combinations of group III (B, Al, Ga, In, and Tl) and group V (N, P, As, Sb, and Bi) elements in the 2D buckled honeycomb structure, including hydrogenation on one or both sides of the films to simulate substrate effects. A total of six compounds (GaBi, InBi, TlBi, TlAs, TlSb, and TlN) are identified to be nontrivial in unhydrogenated case; whereas for hydrogenated case, only four (GaBi, InBi, TlBi, and TlSb) remains nontrivial. The band gap is found to be as large as 855 meV for the hydrogenated TlBi film, making this class of III-V materials suitable for room temperature applications. TlBi remains topologically nontrivial with a large band gap at various hydrogen coverages, indicating the robustness of its band topology against bonding effects of substrates.

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confidence: 57%

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confidence: 99%

Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III–V Buckled Honeycombs

et al. 2015

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“…Traditional III-V compounds like III-P, III-As and III-Sb have been well studied theoretically and experimentally, but for III-Bi compounds, a lack of experimental results make theoretical models for binary bismide critically important. As is known, no natural III-Bi exists on earth, the only successfully synthesized one among the III-Bi family (BBi, AlBi, GaBi and InBi) was InBi by Keen et al [101]. However, InBi was not synthesized as a thin film, but existed in bulk crystal form.…”

Section: Binary Bismidesmentioning

confidence: 99%

“…For thin film synthesization of BBi, AlBi, GaBi and InBi, InBi is the only one known to exist in bulk crystal form, grown on a (100) GaAs substrate using MBE by Keen et al [101]. Growth temperature and In:Bi flux ratio were found to influence the crystallinity of InBi film significantly.…”

Section: Growth Of Binary Iii-bimentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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“…Although the layer or thickness dependency of topological properties of thin films of group IV 20 and V 8 10 24 elements has been reported, we are not aware of a previous study delineating how nontrivial phases evolve in thin films of III-V compounds as the number of layers increases; all the important effects of substrate on the III-V films 25 26 27 have also not been investigated. With this motivation, here we explore the crystal and electronic structures of hydrogenated III-V films using first-principles calculations.…”

mentioning

confidence: 97%

Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate

Yao

Crisostomo

Yeh

et al. 2015

Sci Rep

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We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates.

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Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy

Cited by 11 publications

References 22 publications

Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III–V Buckled Honeycombs

Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III–V Buckled Honeycombs

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate

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