We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates.
Frenkel-Poole (FP) trap energies of atomic layer deposited Al2O3 and HfxAlyO thin films with various Hf∕Al compositions have been extracted. Using a method based on the field and temperature dependence of FP conduction, intrinsic trap energies under zero electric field can be extrapolated. Results indicate that FP trap energies increase from 0.56to1.48eV when adding more and more Al to HfO2. The trap energy seems to be inversely proportional to the square of the dielectric constant of the film, suggesting that traps may originate from the same type of defect, whose energy level is mediated by the dielectric constant.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.