Frenkel-Poole trap energy extraction of atomic layer deposited Al2O3 and HfxAlyO thin films

Abstract

Frenkel-Poole (FP) trap energies of atomic layer deposited Al2O3 and HfxAlyO thin films with various Hf∕Al compositions have been extracted. Using a method based on the field and temperature dependence of FP conduction, intrinsic trap energies under zero electric field can be extrapolated. Results indicate that FP trap energies increase from 0.56to1.48eV when adding more and more Al to HfO2. The trap energy seems to be inversely proportional to the square of the dielectric constant of the film, suggesting that traps may originate from the same type of defect, whose energy level is mediated by the dielectric constant.

Measurements of generation‐recombination effect by low‐frequency phase‐noise technique in AlGaN/GaN MOSHFETs

“…7 shows a sample Lorentzian fit for the GR spectrum at 450 K. We found that the time constants fall in the range of 80 μs-1 ms within 300-450 K. These values are in agreement with predicted ones in Ref. [6]. The energy level of the traps can be found from the equation 0 exp ,…”

“…The driving force behind this is the potential reduction of the gate leakage-current and suppression of the drain-current-collapse, both of which are desired in order to achieve the highest performance from an HFET [2][3][4][5]. However, the oxide layer is not a panacea in that the performance and the reliability of a power device might suffer from the interface and bulk traps associated with the gate oxide layer [6][7][8]. Analysis of these traps can be made easier by bringing to bear new tools in addition to the current-voltage (I-V) and capacitance-voltage (C-V) measurement techniques.…”

High-k shallow traps observed by charge pumping with varying discharging times

“…4(c). [25][26][27] When V high level < 1.2 V, N T is interface traps (N it ) only. On the contrary, when V high level > 1.2 V, N T is both high-k bulk shallow traps (N hkst ) and N it .…”

Growth and characterization of GaInAsP/InP-based Geiger-mode avalanche photodiodes

“…Comparing theory and experimental data we hypothesize that phosphorus vacancies ðV P Þ in the avalanche region are the most probable source of dark counts for 1:06Àmm GM-APDs. The difference in the observed defect energy from DLTS and DCR experiments may be due to Frenkel-Poole barrier lowering caused by the high electric fields in the avalanche layer during DCR testing [11].…”