Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodes

Kaspari, Christian; Zorn, M.; Weyers, M.; Erbert, G.

doi:10.1016/j.jcrysgro.2008.07.018

Cited by 22 publications

(5 citation statements)

References 11 publications

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“…The laser structure features a single quantum well of InGaP, an AlGaInP waveguide, a Si-doped AlInP n-side cladding layer and a C-doped AlGaAs p-side cladding layer. The waveguide has a thickness of about 1.0 µm and results an optical far field angle of the fast axis of about 30° full width at half maximum (FWHM) [9]. …”

Section: Device Manufacturing and Characteristicsmentioning

confidence: 99%

Diode lasers at 626 nm for quantum information processing

Blume

Pohl

Feise

et al. 2014

Research in Optical Sciences

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Section: Device Manufacturing and Characteristicsmentioning

confidence: 99%

Diode lasers at 626 nm for quantum information processing

Blume

Pohl

Feise

et al. 2014

Research in Optical Sciences

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“…The laser structure consists of an GaInP/AlInP n-side cladding, an AlGaInP waveguide with a single 15 nm tensile-strained GaInP quantum well, an AlGaAs p-side cladding and a GaAs cap layer. We used an AlGaAs p-side cladding to achieve higher p-doping concentration and hence a lower series resistance, and to be able to use a standardized processing technology developed for high-brightness infrared lasers [17,18,19].…”

Section: Vertical Structure and Materials Parametersmentioning

confidence: 99%

High luminance tapered diode lasers for flying-spot display applications

et al. 2012

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Flying-spot display applications require high luminance (> 100 TCd/m²) red-emitting lasers. High luminance is defined as a high optical output power and a nearly diffraction limited beam quality at a wavelength with a good visibility of the human eye. Diode lasers, with all their beneficial properties such as direct modulation capability, small size and good electro-optical efficiency, are so far unable to achieve such high luminance, due to catastrophic optical mirror damage (COMD) caused by high facet loads.We will present tapered diode lasers emitting near 635 nm with a larger vertical waveguide to lower the facet load and to alleviate the COMD risk. The lateral structure consists of an index-guided ridge waveguide section for lateral mode filtering, and a gain-guided tapered section for the amplification of radiation and a further reduction of the facet load. The tapered lasers are mounted p-side down on diamond heat spreaders and on copper heat sinks.We achieved an optical output power of 1.1 W at 636 nm at a laser temperature of 5°C. The emitted beam has a nearly diffraction limited (M 2 1/e² < 2) central lobe with a high power content (P CL > 75%). At 636 nm the eye sensitivity is 142 lm/W according to the CIE 1931 photopic eye response curve (v λ ). Hence, we achieved a luminous flux of > 100 lm and a luminosity of 150 TCd/m², thus taking a first step towards diode-laser-based flying-spot displays.

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“…Then, AlGaAs and GaAs multiple quantum well structures were grown [6]. Nowadays, quaternary alloys as aluminum gallium indium phosphide, AlInGaP, [7,8] are used which allows for a bandgap tuning while, being lattice matched to the substrate. However, due to the use of selective epitaxial growth, the use of quaternary alloys is challenging, which is why the GaAs/AlGaAs structure was chosen for the scope of this study.…”

Section: Introductionmentioning

confidence: 99%