Articles you may be interested inElectronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties Appl. Phys. Lett. 97, 203107 (2010); 10.1063/1.3517446
Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dotsA thermal activation energy of 710 meV for hole emission from InAs/ GaAs quantum dots ͑QDs͒ across an Al 0.9 Ga 0.1 As barrier is determined by using time-resolved capacitance spectroscopy. A hole storage time of 1.6 s at room temperature is directly measured, being three orders of magnitude longer than a typical dynamic random access memory ͑DRAM͒ refresh time. The dependence of the hole storage time in different III-V QDs on their localization energy is determined and the localization energies in GaSb-based QDs are calculated using eight-band k · p theory. A storage time of about 10 6 years in GaSb/ AlAs QDs is extrapolated, sufficient for a QD-based nonvolatile ͑flash͒ memory.
We manufactured and investigated distributed Bragg reflector ridge-waveguide diode lasers having sixth-order surface gratings and an emission wavelength around 974 nm. The single-mode output power of the lasers with a total length of 4 mm exceeded 1 W. A very small spectral linewidth of 1.4 MHz (3 dB) consisting of a Lorentzian part of 146 kHz and a Gaussian part of 1308 MHz was measured using a self-delayed heterodyne measurement technique.
Red-emitting ridge waveguide lasers with integrated tenth order surface distributed Bragg reflector gratings were developed. The grating was implemented by the use of a BCl3-Ar-plasma, while the shape of the grating trench was controlled by additional He-backside cooling of the wafer. The devices exhibit longitudinal single mode operation up to 96 mW at 635.3 nm with a side mode suppression ratio of 18 dB and a good beam quality of M2<3. The spectrum is free of mode hops for a span of more than 55 pm.
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