Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

Kim-Chauveau, H.; Frayssinet, Éric; Damilano, B.; Mierry, P. de; Bodiou, Loïc; Nguyen, Long H.; Vennéguès, P.; Chauveau, J.-M.; Cordier, Y.; Duboz, Jean‐Yves; Charash, R.; Vajpeyi, A. P.; Lamy, Jean-Michel; Akhter, Mahbub; Maaskant, Pleun; Corbett, Brian; Hangleiter, A.; Wieck, A. D.

doi:10.1016/j.jcrysgro.2011.10.016

Cited by 10 publications

(7 citation statements)

References 51 publications

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“…without elimination of V-pit formation, it is nevertheless possible to use this material in III-N devices by limiting the number of V-pits using low TD density free-standing GaN templates and keeping the thickness of layer below 100 nm. This approach has enabled the fabrication of lower optical confinement layers of (In y Ga 1 À y )N-based edge emitting lasers diodes [22]. By growing a multilayer with alternating 50 nm thick (In x Al 1 À x )N and 6 nm GaN, the overall crystalline quality of the structure is sufficiently good to obtain lasing [23].…”

Section: Resultsmentioning

confidence: 99%

Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

Vennéguès¹,

Diaby²,

Kim-Chauveau³

et al. 2012

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

Vennéguès¹,

Diaby²,

Kim-Chauveau³

et al. 2012

Journal of Crystal Growth

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“…AlGaN/GaN HEMT layers were grown on thick hydride vapor phase epitaxy FS-GaN (0001) substrates from supplier Lumilog-Saint Gobain where the FS-GaN separation from the foreign substrate (sapphire) results in difficulties such as cracks and other defects [18][19][20][21][22][23][24][25][26][27][28]. The surface of the as-grown FS-GaN substrate cannot be directly used for further epitaxial growth unless a smoothing treatment (mechano-chemical polishing in our case) is performed, which, in turn, can cause further surface and subsurface damage [24].…”

Section: Nanoscale Homoepitaxial Mode Of Growth and Morphologymentioning

confidence: 99%

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

et al. 2015

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The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310°C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly conductive HEMT transistor (I ds > 1 A mm −1 ) to be defined (0.5 A mm −1 at 300°C). The vertical breakdown voltage has been determined to be ∼850 V with the vertical drain-bulk (or gate-bulk) current following the hopping mechanism, with an activation energy of 350 meV. The conductive atomic force microscopy nanoscale current pattern does not unequivocally follow the molecular beam epitaxy AlGaN/GaN morphology but it suggests that the FS-GaN substrate presents a series of preferential conductive spots (conductive patches). Both the estimated patches density and the apparent random distribution appear to correlate with the edge-pit dislocations observed via cathodoluminescence. The sub-surface edge-pit dislocations originating in the FS-GaN substrate result in barrier height inhomogeneity within the HEMT Schottky gate producing a subthreshold current.S Online supplementary data available from stacks.iop.org/NANO/0/000000/mmedia

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“…Many efforts have been made to improve the performance of GaN LDs, such as increased output power, decreased threshold current, and enhanced slope efficiency. Improved designs include various electron blocking layers (EBLs) for better suppression of electron leakage [ 7 , 8 , 9 ] and optimization of various waveguide layers (WLs) and cladding layers (CLs) to decrease internal optical absorption losses [ 10 , 11 , 12 ]. There has been less research on the multiple quantum well (MQW) active region of GaN LDs relative to that on GaN-based light-emitting diodes (LEDs) because the LD structure is much more complex.…”

Section: Introductionmentioning

confidence: 99%

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Cheng

Zhang

et al. 2021

Nanomaterials

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An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and investigated numerically. The laser power–current–voltage performance curves, carrier concentrations, current distributions, energy band structures, and non-radiative and stimulated recombination rates in the quantum wells were characterized. The simulations indicate that an InGaN laser diode with InGaN–GaN–InGaN delta barriers has a lower turn-on current, a higher laser power, and a higher slope efficiency than those with InGaN or conventional GaN barriers. These improvements originate from modified energy bands of the laser diodes with InGaN–GaN–InGaN delta barriers, which can suppress electron leakage out of, and enhance hole injection into, the active region.

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Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

Cited by 10 publications

References 51 publications

Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

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