Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

Vennéguès, P.; Diaby, B.S.; Kim-Chauveau, H.; Bodiou, Loïc; Schenk, H. P. D.; Frayssinet, Éric; Martin, Robert; Watson, I. M.

doi:10.1016/j.jcrysgro.2012.05.004

Cited by 19 publications

(20 citation statements)

References 24 publications

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“…However, some authors have also mentioned the presence of V-defects not associated to any threading dislocations in InAlN layers. 17,23 Another interesting feature is the presence of sometriangular contrasts above the V-defects, as noted by Vennéguèset al 23 Note that theslight grainy contrast visiblein Fig. 4 for the InAlN and GaN layers is due to the amorphous glue used during sample preparation that is covering the observed region.…”

Section: B Phase Separation Due To V-defectsmentioning

confidence: 78%

“…29,30 When growth is done on a GaN template grown on a foreign substrate, threading dislocations are indeed present in the GaN template with a high density be at the origin of V-defects for InGaN 34 or InAlN layers. [20][21][22][23] Other possibilities for the nucleationof V-defects have been proposed. Dopants were shown to increase the V-defect density in GaN 50 and InAlN layers.…”

Section: Discussionmentioning

confidence: 99%

“…It was reported that the six facets of the V-defects were generally {11-2x} ones, 22,23,45,46 but for thick samples, {1-101} facets have also been observed. 23,47 It was shown that In preferentially segregates along the six<1-10x> branches of the V-defects, giving rise to In-rich vertical triangular portion of planes of the {11-20} type. 23 In the present case, the six facets are not very well defined, as can be observedin Fig.5.…”

Section: B Phase Separation Due To V-defectsmentioning

confidence: 97%

“…V-defects (or V-pits) are inverted empty pyramids with a hexagonal base, and they aregenerally attributed to threading dislocations. [20][21][22][23] In addition to the abovementioned structural defects, InAlN layers were shown to degrade with increasing thickness. 24 Thus homogeneous layers with a given composition give birth to an upper layer with a higher or a lower indium composition.…”

Section: Latelymetalorganic Vapor Phase Epitaxy (Movpe) Is the Commomentioning

confidence: 99%

“…23,47 It was shown that In preferentially segregates along the six<1-10x> branches of the V-defects, giving rise to In-rich vertical triangular portion of planes of the {11-20} type. 23 In the present case, the six facets are not very well defined, as can be observedin Fig.5. The same feature is observed forAFM images of the 19.7% layers (Fig.1(c) and 1(d)): V-defects seem circular, whereas for the 13.5% layers (Fig.2), V-defects seem well faceted.…”

Section: B Phase Separation Due To V-defectsmentioning

confidence: 99%

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Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Perillat-Merceroz

Cosendey

Carlin

et al. 2013

Journal of Applied Physics

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Thanks toits high refractive index contrast, band gap and polarization mismatch compared to GaN, In 0.17 Al 0.83 N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diodes, orhigh electron mobility transistors. In order to study the structural degradation mechanism of InAlN layers with increasing thickness, we performed metalorganic vapor phase epitaxy of InAlN layers of thicknesses ranging from 2 to 500 nm, on free-standing (0001) GaN substrates with a low density of threading dislocations, for In compositions of 13.5% (layers under tensile strain), and 19.7%(layers under compressive strain). In both cases, a surface morphology with hillocks isinitially observed, followed by the appearance of V-defects. We propose that those hillocks arise due to kinetic roughening, and that V-defects subsequently appear beyonda critical hillock size. It is seen that the critical thickness for the appearance of V-defects increases together with the surface diffusion length either by increasing the temperature or the In flux because of asurfactant effect.In thick InAlN layers, a better (worse) In incorporation occurring on the concave (convex) shape surfaces of the V-defects is observed leading to a top phase-separated InAlN layer lying on the initial homogeneous InAlN layerafterV-defects coalescence.It is suggested that similar mechanisms could be responsible for the degradation of thick InGaN layers.

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Section: B Phase Separation Due To V-defectsmentioning

confidence: 78%

Section: Discussionmentioning

confidence: 99%

Section: B Phase Separation Due To V-defectsmentioning

confidence: 97%

Section: Latelymetalorganic Vapor Phase Epitaxy (Movpe) Is the Commomentioning

confidence: 99%

Section: B Phase Separation Due To V-defectsmentioning

confidence: 99%

See 3 more Smart Citations

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Perillat-Merceroz

Cosendey

Carlin

et al. 2013

Journal of Applied Physics

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Non‐ and semipolar AlInN one‐dimensionally lattice‐matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN‐based devices

Buß

Horenburg

Rossów

et al. 2015

Physica Status Solidi (b)

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In this contribution, we demonstrate that for non‐ and semipolar AlInN one‐dimensionally lattice‐matched to GaN, controlled relaxation in different in‐plane directions of the growth surface can be induced. All of our samples were grown on false(11true22‾false) GaN templates on patterned r‐plane sapphire as well as on m‐oriented 6H‐SiC substrates and free‐standing pseudo‐bulk GaN substrates. The InN mole fraction of the Al1−xInxN is varied from 18% up to 28% corresponding to one‐dimensional lattice matching in various in‐plane directions of the growth surface. By controlling the composition as well as the thickness, we realized one‐dimensional relaxation of the AlInN layers along the nonlattice‐matched direction. This opens new perspectives for strain and polarization engineering in optically active layers grown subsequently and gives new possibilities to design high indium‐containing GaInN quantum well structures for efficient long wavelength light emitters.

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Influence of Growth Parameters on a‐Plane InGaN/GaN Heterostructures on r‐Sapphire

Orlova

Abdullaev

Mezhenny

et al. 2019

Physica Status Solidi (b)

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The n‐type and p‐type a‐GaN films are successfully grown by MOCVD on the r‐sapphire substrate with smooth mirror surface morphology. The growth rate versus the growth temperature is investigated. Optimum doping parameters by acceptor and donor impurities − 8 × 1017 and 4 × 1018 cm−3 are determined. Low‐temperature amorphous buffer (nucleus) GaN layer and the island growth process with additional doping profile in quantum wells (QW) are investigated. The heterostructures are grown based on direct investigation and simulation results and are investigated by atomic‐force microscopy (AFM) and scanning electron microscopy (SEM). In this work, V‐defects of the structure for non‐polar orientation films are investigated for the first time, thus complementing earlier results for polar and semi‐polar films. The results indicate that the defect density was reduced up to 104 cm−2, with improved surface morphology uniformity. During growth, the influence from V/III flow ratio and doping barriers by indium atoms was detected. Decrease in the V/III ratio up to 1320 at the overgrowth stage of the precipitated low‐temperature nuclei caused growth‐island formation and increased the growth rate in the lateral direction, thus decreasing the dislocation density.

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Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

Cited by 19 publications

References 24 publications

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Non‐ and semipolar AlInN one‐dimensionally lattice‐matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN‐based devices

Influence of Growth Parameters on a‐Plane InGaN/GaN Heterostructures on r‐Sapphire

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