Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique

Abstract

Heteroepitaxial GaN and GaAs films were grown by both conventional two-step MOCVD and the new “capillary epitaxy” technique on (001) and (111) fianite (YSZ) substrates. The capillary epitaxy technique was investigated for the example of GaAs films growth on a YSZ substrate. This technique allows both the reduction of the minimum thickness and the improvement of the quality of III-V films. PL spectra of undoped GaN films on YSZ were studied.

Fianite in Photonics

“…Fianite has a number of advantages over other dielectric materials as a substrate and buffer layer for the epitaxy of Si and A III B V compounds [6][7][8][9][10][11][12][16][17][18].…”

“…The first successful results on epitaxial MOCVD growth of various A III B V compounds (GaAs, InAs, InGaAs, AlGaAs, GaAsN and GaN) on YSZ are presented in a number of studies [10,16,17], InN on YSZin [21,22]. In [17,18] «capillary epitaxy technique» -the new effective way of heteroepitaxy -was developed.…”

“…The first successful results on epitaxial MOCVD growth of various A III B V compounds (GaAs, InAs, InGaAs, AlGaAs, GaAsN and GaN) on YSZ are presented in a number of studies [10,16,17], InN on YSZin [21,22]. In [17,18] «capillary epitaxy technique» -the new effective way of heteroepitaxy -was developed. It has been shown that the use of capillary forces in the method positively influences both on the mechanism of epitaxial growth, and on quality of A III B V epitaxial films, and also reduces the minimum thickness of a continuous layer [17,18].…”

“…In [17,18] «capillary epitaxy technique» -the new effective way of heteroepitaxy -was developed. It has been shown that the use of capillary forces in the method positively influences both on the mechanism of epitaxial growth, and on quality of A III B V epitaxial films, and also reduces the minimum thickness of a continuous layer [17,18].…”

“…A new effective method of heteroepitaxy, capillary epitaxy, was proposed in [17]. It allows us in particular to obtain films of A III B V compounds on fianite using the MOCVD approach.…”