Growth of ZnSe thin layers on different substrates and their structural consequences with bath temperature

Raj, A. Moses Ezhil; Delphine, S. Mary; Sanjeeviraja, C.; Jayachandran, M.

doi:10.1016/j.physb.2010.03.019

Cited by 33 publications

(5 citation statements)

References 31 publications

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“…The CdS sensitized solar cells are attracting the researches for exploring the materials elaborately (Yan et al, 2013;Senthamilselvi et al, 2013). The noticeable efficiency of the CdS makes it to be useful as a window layer in solar cell materials with several other semiconductor materials such as ZnS (Hwang et al, 2012), Cu 2 S (Lindroos et al, 2000), FeS (Manikandan et al, 2014a), ZnSe (Raj et al, 2012), CdTe (Girish Kumar and Koteswara Rao, 2014) and CdSe (Deshpande et al, 2013). The CdS films is deposited by several coating techniques viz., chemical bath deposition (Rusu et al, 2003;Obaid et al, 2013;Oliva-Aviles et al, 2010), spray pyrolysis (Ikhmayies et al, 2013), spin coating (Seon et al, 2009), MOCVD (Yoon et al, 2006).…”

Section: Introductionmentioning

confidence: 99%

Deposition and Characterization of CdS Nano Thin Film with Complexing Agent Triethanolamine

Manikandan¹,

Dilip²,

Prabaharan³

et al. 2015

American Journal of Engineering and Applied Sciences

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Abstract:The equimolar concentration thin films of Cadmium Sulfide (Cd x S x ) with the complexing agent TEA were deposited on a glass substrate by the SILAR technique. The crystalline nature with face centered cubic crystal system of the CdS films is determined from Xray diffraction analysis. The broadened diffraction peaks indicated nano sized particles of the film materials. The surface morphology of the films was studied by SEM analysis. The Energy Dispersive Analysis of X-ray (EDAX) plot confirms the equimolar composition of Cd and S ions in the film materials. Surface topography of the film was studied by AFM. The optical characteristic of absorbance, transmittance and band gap was analyzed by UV-visible spectra. The band gap energy of the material was observed as 2.18 eV and chemical bonding was studied by FT-IR spectral analysis.

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Section: Introductionmentioning

confidence: 99%

Deposition and Characterization of CdS Nano Thin Film with Complexing Agent Triethanolamine

Manikandan¹,

Dilip²,

Prabaharan³

et al. 2015

American Journal of Engineering and Applied Sciences

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“…Most electrodepositions of ZnSe were carried out cathodically in acidic aqueous baths containing Zn(II) and SeO 2 . [30][31][32][33][34][35][36][37] In acidic solutions, SeO 2 dissolves to form H 2 SeO 3 . ZnSe has also been electrodeposited from alkaline aqueous baths.…”

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confidence: 99%

Voltammetric Study of Selenium and Two-Stage Electrodeposition of Photoelectrochemically Active Zinc Selenide Semiconductor Films in Ionic Liquid Zinc Chloride-1-Ethyl-3-Methylimidazolium Chloride

Pai

Hsieh

et al. 2015

J. Electrochem. Soc.

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Ionic liquid zinc chloride-1-ethyl-3-methylimidazolium chloride (IL ZnCl 2 -EMICl) with a ZnCl 2 /EMICl ratio of 40/60 mol% was used as the electrolyte to study the voltammetric behavior of Se(IV) introduced into the IL as selenium chloride (SeCl 4 ) or selenium oxide (SeO 2 ). The electrodeposition of ZnSe was performed using constant-potential electrolysis at tungsten electrodes via a two-stage approach from the IL with and without SeO 2 . The nucleation mechanism of Se at the tungsten electrodes agrees better with the three-dimensional instantaneous nucleation than the progressive nucleation based on Sharifker's model. Crystalline Se and approximately stoichiometric crystalline ZnSe electrodeposits could be obtained from this system. The ZnSe films showed photoelectrochemical activity with a bandgap energy of ∼2.5 eV. According to the experiments of the dependence of the photocurrent on the applied potential, the ZnSe film was determined to be a p-type semiconductor with the flatband potential V FB of −0. Zinc selenide (ZnSe) is a II-VI semiconductor that belongs to the chalcogenide family. ZnSe is usually obtained as a n-type semiconductor with a wide bandgap (2.67-2.7 eV). p-type ZnSe, which is very likely due to excess Se in the deposits, has been prepared using electrodeposition.1 ZnSe has been reported to be a useful material for various optoelectronic devices, such as lightemitting devices, window layers for solar cells, photovoltaic cells, laser screens, film transistors, photoelectrochemical cells, and optical components for infrared lasers. 19,25 Compared with these approaches, electrodeposition is more attractive [26][27][28][29] in terms of convenience, cost, and suitability for the large-scale production of thin films. Moreover, the surface morphology, composition, and properties of semiconductors can be flexibly controlled by adjusting the operating parameters such as electrodeposition potential or current, potential waveforms (constant potential or pulse potential), concentration of precursors, temperature, and additives. Therefore, ZnSe has been widely prepared using electrodeposition, with mostly successful results. Most electrodepositions of ZnSe were carried out cathodically in acidic aqueous baths containing Zn(II) and SeO 2 . [30][31][32][33][34][35][36][37] In acidic solutions, SeO 2 dissolves to form H 2 SeO 3 . ZnSe has also been electrodeposited from alkaline aqueous baths. [38][39][40] In alkaline solutions, Zn(II) and SeSO 3 2− are most frequently used as the precursors, and complexing agents, such as EDTA, are usually needed for forming strong complex ions with Zn 2+ to prevent the chemical precipitation of ZnSe, which is produced from the reaction between Zn(II) and SeSO 3 2− . Few studies have electrodeposited ZnSe from nonaqueous baths such as dimethylsulfoxide [41][42][43] and molten salts (CaCl 2 -NaCl at 550• C). 44,45 In almost all recent studies and applications of ZnSe semiconductors, ZnSe has been prepared using electrodeposition from aqueous baths. [46][47][48] 28,29,[50]...

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“…Zn-Se could be electrodeposited on the substrate surface by the possible heterogeneous process. This type of reaction is based on the interaction and the reaction between SeO 3 2ions and Zn 2+ ions [10]. So in order to control these reactions, electrodeposited parameters seem to be the essential components.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of Zn-Se/Stainless Steel Thin Films by Ultrasonic Electrochemical Deposition and its Application

Wang

Huang

Jiang

et al. 2011

AMR

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Zn-Se/stainless steel thin films were prepared by ultrasonic electrochemical deposition and the application of them was discussed. Firstly, the parameters of the ultrasonic electrochemical deposition were optimized, and the morphology and component of Zn-Se thin films prepared were analyzed by SEM and EDS, it may be seen that more appropriate Zn-Se thin films were prepared by ultrasonic-electrodepositing method. Secondly, Zn-Se thin films may be applied in the aspect of treatment wastewater. Effect on treatment of Rhodamine B imitative wastewater was investigated, which ultrasonic electrodepositing method was better than traditional electrodepositing method.

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Growth of ZnSe thin layers on different substrates and their structural consequences with bath temperature

Cited by 33 publications

References 31 publications

Deposition and Characterization of CdS Nano Thin Film with Complexing Agent Triethanolamine

Deposition and Characterization of CdS Nano Thin Film with Complexing Agent Triethanolamine

Voltammetric Study of Selenium and Two-Stage Electrodeposition of Photoelectrochemically Active Zinc Selenide Semiconductor Films in Ionic Liquid Zinc Chloride-1-Ethyl-3-Methylimidazolium Chloride

Fabrication of Zn-Se/Stainless Steel Thin Films by Ultrasonic Electrochemical Deposition and its Application

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