Growth of ZnMgTe/ZnTe waveguide structures on ZnTe (001) substrates by molecular beam epitaxy

Kumagai, Yoshinao; Imada, Shota; Baba, Toshiaki; Kobayashi, Masakazu

doi:10.1016/j.jcrysgro.2011.01.066

Cited by 20 publications

(12 citation statements)

References 17 publications

(16 reference statements)

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“…ZnTe layers were grown on (110), (111), and (211) Si substrates by MBE. The growth parameters were essentially the same as that of lattice matched growth [5][6][7][8]. Elemental Zn and Te were used as source materials.…”

Section: Experiments 21 Znte On Simentioning

confidence: 99%

X‐ray pole figure analysis of ZnTe layers grown on lattice mismatched substrates

Kobayashi

Kumagai

Baba

et al. 2012

Phys. Status Solidi C

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The electro‐optical effect of ZnTe is recently highlighted, and various device structures utilizing ZnTe are explored. ZnTe substrates are recently commercially available, and high quality homoepitaxial layers can be grown. On the other hand, the cost of the substrate could be a concern for the practical device application. In this study, Si and Al2O3 substrates were used since they are widely used for many kinds of device applications. The lattice mismatch between those substrate materials and ZnTe is above 10% and those mismatch strain should be carefully considered. ZnTe layers were nucleated on chemically treated substrate surfaces. (111), (110), (211) oriented Si substrates and (0001), (11‐20), and (10‐10) planes of Al2O3 were used. By taking the pole figure data and studying the crystal symmetry of the domain, detail information associated with the formation of domains in the layer was discussed. The pole figure analysis revealed that several kinds of (110) oriented ZnTe domains rotated 60 degrees each other were formed on (110) oriented Si surface. On the other hand, preferentially oriented single domain of (111) was confirmed for the layer grown on the (0001) plane of Al2O3. ZnTe layers grown on (10‐10) plane Al2O3exhibited a unique domain formation. Pole figure data combined with the conventional theta‐2theta measurement indicated that (211) oriented plane of ZnTe was a dominant domain formed on the (10‐10) plane Al2O3. These crystallographic features would be related to the interface valency as well as the interfacial bond structure. X‐ray pole figure method was a useful and powerful method to study the domain formation of the severely lattice mismatched structures. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Experiments 21 Znte On Simentioning

confidence: 99%

X‐ray pole figure analysis of ZnTe layers grown on lattice mismatched substrates

Kobayashi

Kumagai

Baba

et al. 2012

Phys. Status Solidi C

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“…The “almost coherent” waveguide structure was prepared with Zn 0.8 Mg 0.2 Te cladding layer since the Mg composition should be limited to 25% in order to maintain the crystallographic quality without the serious oxidation . However, the light propagation efficiency through the waveguide was insufficient and the leak of light at the interface (cladding/core) became a serious problem .…”

Section: Introductionmentioning

confidence: 99%

Influence of the lattice mismatch strain on the surface morphology of ZnMgTe/ZnTe/ZnMgTe electro-optical waveguide structure

Kazami

Sun

Taguri

et al. 2016

Phys. Status Solidi B

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ZnMgTe/ZnTe waveguide is a high potential electro‐optical device. Thick and high Mg composition cladding layers are required for high optical performance waveguides. However, adding Mg would increase the lattice mismatch between ZnMgTe and ZnTe which would cause dislocation defects and generate asperities at interfaces. In this article, influence of the lattice mismatch strain to the waveguide surface morphology was studied. Waveguide structures were prepared by molecular beam epitaxy. The surface morphologies were observed using atomic force microscope and propagation loss of the waveguides were studied. Total of 0.5–0.7 μm asperities were observed on the surface of waveguides with 20% of Mg composition and 1.2 μm of the total cladding layer thickness. The asperities on the surface became larger (1.0–1.2 μm) when the Mg composition increased to 40%. The propagation loss of the waveguide was suppressed to 7 dB by tuning the growth parameters and the resulting interface roughness.

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“…Zinc telluride (ZnTe) has attracted attention for use in various novel devices including light emitting diodes , photovoltaic cells , waveguides , and terahertz wave detectors . In particular, ZnTe‐based terahertz wave detectors based on the electro‐optic effect have been widely explored.…”

Section: Introductionmentioning

confidence: 99%

Selective growth of ZnTe on sapphire substrates using a SiO₂ mask

Nakasu

Hattori

Sun

et al. 2016

Physica Status Solidi (b)

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Phone/Fax: þ81 3 5286 1684ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO 2 -masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (¼350 8C), low growth rate (2 0.3 mm h À1 ), and low J Te /J Zn flux ratio (2 0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO 2 mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO 2 .

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Growth of ZnMgTe/ZnTe waveguide structures on ZnTe (001) substrates by molecular beam epitaxy

Cited by 20 publications

References 17 publications

X‐ray pole figure analysis of ZnTe layers grown on lattice mismatched substrates

X‐ray pole figure analysis of ZnTe layers grown on lattice mismatched substrates

Influence of the lattice mismatch strain on the surface morphology of ZnMgTe/ZnTe/ZnMgTe electro-optical waveguide structure

Selective growth of ZnTe on sapphire substrates using a SiO₂ mask

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Growth of ZnMgTe/ZnTe waveguide structures on ZnTe (001) substrates by molecular beam epitaxy

Cited by 20 publications

References 17 publications

X‐ray pole figure analysis of ZnTe layers grown on lattice mismatched substrates

X‐ray pole figure analysis of ZnTe layers grown on lattice mismatched substrates

Influence of the lattice mismatch strain on the surface morphology of ZnMgTe/ZnTe/ZnMgTe electro-optical waveguide structure

Selective growth of ZnTe on sapphire substrates using a SiO2 mask

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Selective growth of ZnTe on sapphire substrates using a SiO₂ mask