Selective growth of ZnTe on sapphire substrates using a SiO₂ mask

Abstract

Phone/Fax: þ81 3 5286 1684ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO 2 -masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (¼350 8C), low growth rate (2 0.3 mm h À1 ), and low J Te /J Zn flux ratio (2 0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO 2 mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO 2 .