Growth of thin silver films on silicon oxide pretreated by low temperature argon plasma

Romanyuk, Andriy; Steiner, Roland; Mack, Iris; Oelhafen, P.; Mathys, Daniel

doi:10.1016/j.susc.2006.11.044

Cited by 8 publications

(4 citation statements)

References 19 publications

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“…Between 70% and 100% the nanocrystals stay in contact which provides an electrical pathway for the electrons. At 100%, the silver layer has a sheet resistivity of 1 Ω.sq, which is consistent with the literature [7]. On the contrary, below a silver ratio of 70%, the amorphous WO3 disconnects the nanocrystals one from another, which causes an increase of the sheet resistivity.…”

Section: Electrical Studysupporting

confidence: 90%

P‐183: Ag:WO₃ Cermet as a Stable Cathode with Low and Tunable Reflectance for Top‐Emission OLED

Caron

Maindron

Racine

et al. 2019

Symp Digest of Tech Papers

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We present a new cermet cathode Ag:WO3 for top-emission OLEDs. The silver nano-particles in the layer lead to a tunable plasmonic resonance from 500 to 800 nm which limits ambient light reflection. Furthermore, the introduction of WO3 in the cathode improves the lifetime of the device. Figure 8 : Luminance variation against time of the OLED with 15 nm thick Ag (reference) and Ag(70%):WO3 cathode, at a fixed current density of 1mA/cm² P-183 / B. Caron SID 2019 DIGEST • 1923

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Section: Electrical Studysupporting

confidence: 90%

P‐183: Ag:WO₃ Cermet as a Stable Cathode with Low and Tunable Reflectance for Top‐Emission OLED

Caron

Maindron

Racine

et al. 2019

Symp Digest of Tech Papers

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“…With increasing oxygen flow rate, the top SiON layer sputtered on the Ag layer exhibited rough surface due to transition from continuous layer to randomly connected dots or islands. In addition, the percolation threshold is reduced and the coalescence commences at lower film thickness for Ag with a reduced oxygen concentration as reported by Romanyuk et al 20 Therefore, based on the XPS depth profile and HREM results, the different electrical properties of the SiON/Ag/SiON multilayer caused by the oxygen flow rate during the continuous sputtering process can be explained by the difference in connectivity of the Ag layer within the SiON/Ag/SiON multilayer. At low oxygen flow rates, the Ag metal existed as a type of continuously connected layer, and therefore acted as the main current path in the metallic SiON/Ag/SiON multilayer; however, at high oxygen flow rates, unconnected Ag dots or islands were formed by intense Ar plasma etching and consequently destroyed the former current path.…”

supporting

confidence: 59%

Effect of Oxygen Flow Rate on the Electrical Properties of a Transparent SiON/Ag/SiON Multilayer

Cho

Kim

Hosono

et al. 2011

Electrochemical and Solid-State Letters

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We report the effects of oxygen flow rate on the electrical properties of transparent silicon oxynitride (SiON)/Ag/SiON multilayer films, whose layers were formed via continuous sputtering. The SiON/Ag/SiON multilayer that was sputtered at low oxygen flow rates (below 0.6 sccm) showed metallic conduction (dρ/dT > 0) with a resistivity of 2.013 × 10 −4 Ohm-cm, while SiON/Ag/SiON film grown at high oxygen flow rates exhibited insulating behavior. These opposing electrical behaviors are related to the transition of the inserted Ag layer from a continuous layer to a layer of randomly disconnected islands with increasing oxygen flow rate.In 2 O 3 , ZnO and SnO 2 -based transparent conducting oxides (TCOs) have been widely employed as transparent electrodes in flatpanel displays, photovoltaics, and touch panels due to their low resistivities and high optical transmittances in the visible wavelength region. 1-4 Yet, recent rapid advances in transparent optoelectronics are requiring that transparent electrodes have much lower resistivities than those of conventional ITO, GZO, AZO, and FTO films. 5 In particular, the resistivities of the transparent interconnects in transparent displays should be comparable to those in metallic Cu or Al films. For these reasons, oxide-metal-oxide (OMO) multilayer electrodes with metallic conduction behaviors have been suggested as promising candidates to replace conventional ITO films due to their very low resistivities (∼10 −5 Ohm-cm) and high transmittances (85%). In our previous work, we suggested various OMO multilayer schemes, such as IZTO/Ag/IZTO, 6 ITO/Ag/ITO, 7, 8 IZO/Ag/IZO, 9 Nb:TiO 2 /Ag/Nb:TiO 2 , 10, 11 GZO/Ag/GZO, 12 AZO/Ag/AZO, 12 and ZTO/Ag/ZTO, 13 for application in organic light emitting diodes (OLEDs) and organic photovoltaics. Even with an oblique Ag layer, most OMO multilayer electrodes exhibit high transparency due to the antireflection effect of Ag-dielectric interfaces, as well as a metallic resistivity of ∼10 −5 Ohm-cm. 8, 14 Although Cattin et al. and Leng et al. reported the electrical and optical properties of insulator-Ag-insulator multilayer, 15, 16 a detailed investigation of SiON-Ag-SiON multilayer is still lacking. In particular, there is no report on how the oxygen flow rate during the sputtering process affects the electrical properties of transparent SiON/Ag/SiON films.In this study, we investigated the effects of the oxygen flow rate on the electrical properties of a SiON/Ag/SiON multilayer film during sputtering of both SiON and Ag layers. We found that the oxygen flow rate during continuous sputtering critically affects the conductivity of the SiON/Ag/SiON multilayer. Here we suggest a possible mechanism to explain the different electrical properties of the SiON/Ag/SiON multilayer based on XPS depth profile analysis and HRTEM examination.To test these properties, a SiON (35 nm)/Ag (12 nm)/SiON (35 nm) multilayer was prepared using a tilted dual-target RF magnetron sputtering system with a constant Ar flow rate of 10 sccm while the oxygen flow rate w...

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“…There is a tradeoff in determining the thickness of the semitransparent Ag cathode. The optical transmittance decreased, but the conductivity increased, with increasing Ag thickness [12,13,33,34]. In our experiments, it was found that 15 nm was the thinnest value for which Ag formed a connecting network and exhibited the highest optical transmittance (38.8% at 550 nm) and an acceptable resistivity (2.30 × 10 −4 cm 2 m −1 , comparable to 100 nm Ag with 1.49 × 10 −4 cm 2 m −1 ).…”

Section: Methodsmentioning

confidence: 50%

Modification of silver anode and cathode for a top-illuminated organic photovoltaic device

Lin

Liu

Hsu

et al. 2010

J. Phys. D: Appl. Phys.

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We have demonstrated a top-illuminated organic photovoltaic device with a thick Ag anode and a thin Ag cathode capped with an α-naphthylphenylbiphenyl diamine (NPB) thin film. The surface of the Ag anode was oxidized by UV–ozone which improved the carrier collection and reduced the exciton quenching. Compared with the control device with an indium tin oxide anode, a 15.59 times reduction in the serial resistance and a 1.72 times increase in the shunt resistance were observed with a fill factor of 0.61 in such a device. The NPB capping layer not only improved the light transmission from the semitransparent cathode, but also hindered the formation of Ag island growth and thereby improved the device stability.

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Growth of thin silver films on silicon oxide pretreated by low temperature argon plasma

Cited by 8 publications

References 19 publications

P‐183: Ag:WO₃ Cermet as a Stable Cathode with Low and Tunable Reflectance for Top‐Emission OLED

P‐183: Ag:WO₃ Cermet as a Stable Cathode with Low and Tunable Reflectance for Top‐Emission OLED

Effect of Oxygen Flow Rate on the Electrical Properties of a Transparent SiON/Ag/SiON Multilayer

Modification of silver anode and cathode for a top-illuminated organic photovoltaic device

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Growth of thin silver films on silicon oxide pretreated by low temperature argon plasma

Cited by 8 publications

References 19 publications

P‐183: Ag:WO3 Cermet as a Stable Cathode with Low and Tunable Reflectance for Top‐Emission OLED

P‐183: Ag:WO3 Cermet as a Stable Cathode with Low and Tunable Reflectance for Top‐Emission OLED

Effect of Oxygen Flow Rate on the Electrical Properties of a Transparent SiON/Ag/SiON Multilayer

Modification of silver anode and cathode for a top-illuminated organic photovoltaic device

Contact Info

Product

Resources

About

P‐183: Ag:WO₃ Cermet as a Stable Cathode with Low and Tunable Reflectance for Top‐Emission OLED

P‐183: Ag:WO₃ Cermet as a Stable Cathode with Low and Tunable Reflectance for Top‐Emission OLED