With the rapid development of artificial intelligence, the simulation of the human brain for neuromorphic computing has demonstrated unprecedented progress. Photonic artificial synapses are strongly desirable owing to their higher neuron selectivity, lower crosstalk, wavelength multiplexing capabilities, and low operating power compared to their electric counterparts. This study demonstrates a highly transparent and flexible artificial synapse with a two‐terminal architecture that emulates photonic synaptic functionalities. This optically triggered artificial synapse exhibits clear synaptic characteristics such as paired‐pulse facilitation, short/long‐term memory, and synaptic behavior analogous to that of the iris in the human eye. Ultraviolet light illumination‐induced neuromorphic characteristics exhibited by the synapse are attributed to carrier trapping and detrapping in the SnO2 nanoparticles and CsPbCl3 perovskite interface. Moreover, the ability to detect deep red light without changes in synaptic behavior indicates the potential for dual‐mode operation. This study establishes a novel two‐terminal architecture for highly transparent and flexible photonic artificial synapse that can help facilitate higher integration density of transparent 3D stacking memristors, and make it possible to approach optical learning, memory, computing, and visual recognition.

We report a systematic comparison study of 3,5‐di(N‐carbazolyl)tetraphenylsilane (SimCP) and N,N′‐dicarbazolyl‐3,5‐benzene (mCP), which are used as the host materials for phosphorescent blue dopants in organic light‐emitting diodes (OLEDs). On the basis of photoexcitation emission spectroscopy, thermal stability analysis, photoelectron analysis, charge transport measurements, and molecular dynamics (MD) simulations, we conclude that the non‐π‐conjugated meta‐substituted triphenylsilyl moiety of SimCP exerts a unique hindering effect on the molecular packing characteristics in the condensed phase. The chemical origin of the superior performance of SimCP over mCP is revealed, and is expected to be helpful for the molecular design of effective host materials for enhancing the performance of blue phosphorescent OLEDs.

In this letter, we present and analyze the device performance of the mixed host ͑MH͒ organic light-emitting devices ͑OLEDs͒. The host of the emitting layer ͑EML͒ material in this device consists of a hole transport layer ͑HTL͒ and an electron transport layer ͑ETL͒ fabricated by coevaporation. The bipolar transport characteristic of the MH layer helps to reduce the driving voltage. Device lifetime is increased due to the elimination of the sharp boundary of the HTL/EML interface. Combining the MH structure with a high mobility electron ETL material, bis͑10-hydroxybenzo͓h͔qinolinato͒beryllium, the OLED has shown a brightness of 27 600 cd/ m 2 at a driving voltage of 5 V, and a lifetime four times longer than that of a conventional OLED.

A series of group III metal chelates have been synthesized and characterized for the versatile application of organic light-emitting diodes (OLEDs). These metal chelates are based on 4-hydroxy-1,5-naphthyridine derivates as chelating ligands, and they are the blue version analogues of well-known green fluorophore Alq(3) (tris(8-hydroxyquinolinato)aluminum). These chelating ligands and their metal chelates were easily prepared with an improved synthetic method, and they were facially purified by a sublimation process, which enables the materials to be readily available in bulk quantity and facilitates their usage in OLEDs. Unlike most currently known blue analogues of Alq(3) or other deep blue materials, metal chelates of 4-hydroxy-1,5-naphthyridine exhibit very deep blue fluorescence, wide band gap energy, high charge carrier mobility, and superior thermal stability. Using a vacuum-thermal-deposition process in the fabrication of OLEDs, we have successfully demonstrated that the application of these unusual hydroxynaphthyridine metal chelates can be very versatile and effective. First, we have solved or alleviated the problem of exciplex formation that took place between the hole-transporting layer and hydroxynaphthyridine metal chelates, of which OLED application has been prohibited to date. Second, these deep blue materials can play various roles in OLED application. They can be a highly efficient nondopant deep blue emitter: maximum external quantum efficiency eta(ext) of 4.2%; Commision Internationale de L'Eclairage x, y coordinates, CIE(x,y) = 0.15, 0.07. Compared with Alq(3), Bebq(2) (beryllium bis(benzoquinolin-10-olate)), or TPBI (2,2',2''-(1,3,5-phenylene)tris(1-phenyl-1H-benzimidazole), they are a good electron-transporting material: low HOMO energy level of 6.4-6.5 eV and not so high LUMO energy level of 3.0-3.3 eV. They can be ambipolar and possess a high electron mobility of 10(-4) cm(2)/V s at an electric field of 6.4 x 10(5) V/cm. They are a qualified wide band gap host material for efficient blue perylene (CIE(x,y) = 0.14, 0.17 and maximum eta(ext) 3.8%) or deep blue 9,10-diphenylanthracene (CIE(x,y) = 0.15, 0.06 and maximum eta(ext) 2.8%). For solid state lighting application, they are desirable as a host material for yellow dopant (rubrene) in achieving high efficiency (eta(ext) 4.3% and eta(P) 8.7 lm/W at an electroluminance of 100 cd/m(2) or eta(ext) 3.9% and eta(P) 5.1 lm/W at an electroluminance of 1000 cd/m(2)) white electroluminescence (CIE(x,y) = 0.30, 0.35).

Homogeneous solid solutions of sol−gel-prepared R 2 NiMnO 6 (R = La, Pr, Nd, Sm, Gd, Tb, Dy, Y, and Ho) double perovskites crystallize in a B-site-ordered monoclinic structure (P2 1 /n space group). Monoclinic distortion enhances with decreasing R 3+ ionic radii (r R 3+ ). The magnetic ordering temperature (T C ) decreases from 270 K for La 2 NiMnO 6 to 80 K for Ho 2 NiMnO 6 as r R 3+ decreases from 1.16 Å (La 3+ ) to 1.02 Å (Ho 3+ ). An additional magnetic anomaly is observed in Nd 2 NiMnO 6 , Sm 2 NiMnO 6 , Tb 2 NiMnO 6 , and Dy 2 NiMnO 6 at lower temperatures, which originates from the 3d−4f coupling between Mn−Ni and Nd 3+ /Sm 3+ /Tb 3+ /Dy 3+ magnetic moments. Further, high saturation magnetization is achieved for all samples, indicating that they are atomically ordered and have less antisite disorders. Upon a decrease in the size of R 3+ , the local structure shows an expansion of NiO 6 octahedra and almost unchanged of MnO 6 octahedra. X-ray-absorption near-edge spectroscopy reveals a majority of Ni 2+ and Mn 4+ ions in all samples. Softening of phonon modes results in the elongation of the Ni/Mn−O bond length. Finally, a correlation among lattice parameters, structural distortion, octahedral tilting, superexchange angle, electronic band gap, Curie temperature, and the rare-earth ionic radius is established.

An exciplex forming cohost system is employed to achieve a highly efficient organic light-emitting diode (OLED) with good electroluminescent lifetime. The exciplex is formed at the interfacial contact of a conventional star-shaped carbazole hole-transporting material, 4,4',4″-tris(N-carbazolyl)-triphenylamine (TCTA), and a triazine electron-transporting material, 2,4,6-tris[3-(1H-pyrazol-1-yl)phenyl]-1,3,5-triazine (3P-T2T). The excellent combination of TCTA and 3P-T2T is applied as the cohost of a common green phosphorescent emitter with almost zero energy loss. When Ir(ppy)(acac) is dispersed in such exciplex cohost system, OLED device with maximum external quantum efficiency of 29.6%, the ultrahigh power efficiency of 147.3 lm/W, and current efficiency of 107 cd/A were successfully achieved. More importantly, the OLED device showed a low-efficiency roll-off and an operational lifetime (τ) of ∼1020 min with the initial brightness of 2000 cd/m, which is 56 times longer than the reference device. The significant difference of device stability was attributed to the degradation of exciplex system for energy transfer process, which was investigated by the photoluminescence aging measurement at room temperature and 100 K, respectively.

A near‐infrared photodetector with optimized performance is reported using varied thickness (20, 40, 60, and 80 nm) of the active layer comprising chloroaluminium phthalocyanine (ClAlPc) and fullerene (C70) at the ratio of 1:3, and TAPC:10% MoO3 and BPhen as electron and hole blocking layers, respectively. The experimental results reveal that the photodetector with 80 nm thick active layer provides the best performance at the wavelength of 730 nm achieving a very low dark current density of 1.15 × 10−9 A cm−2 and an external quantum efficiency of 74.6% with a responsivity of 0.439 A W−1 at −2 V bias. Additionally, the device exhibits a dramatic high detectivity of 4.14 × 1013 cm Hz1/2 W−1 at 0 V bias. The device exhibits not only a large linear response over a wide optical power range (LDR of 173.0 dB), but also a broad frequency response (778.7 kHz) and rise/fall time of 2.13/0.77 µs (based on trigger pulses at a frequency of 10 kHz) at the applied bias of −2 V. Based on the impedance spectroscopic study and the conventional characterization of electro‐optical properties, the results demonstrate the superiority of this device over other small molecule‐based near‐infrared photodetectors.

The authors report the investigation of the charge transport behaviors in mixed thin films of N , NЈ-diphenyl-N , NЈ-bis͑1-napthyl͒-1,1Ј-biphenyl-4 , 4Ј-diamine and tris͑8-hydroxyquinoline͒ aluminum. The extracted electron and hole drift mobility were found to be sensitive to the compositional fraction and interpreted by energy levels, charge mobilities of neat compounds, and microscopic networks within the mixed systems. The carrier conduction characteristics, therefore, were used to illustrate the electrical and optical properties of the organic light emitting devices with a mixed layer and present direct evidences on the role of the mixed layer in these devices.