Growth of SiC by PVT method in the presence of cerium dopant

Racka, K.; Tymicki, E.; Grasza, K.; Kowalik, I.A.; Arvanitis, D.; Pisarek, Marcin; Kościewicz, Kinga; Jakieła, R.; Sgorbini, Barbara; Diduszko, R.; Teklińska, Dominika; Mierczyk, Jadwiga; Křupka, J.

doi:10.1016/j.jcrysgro.2013.05.011

Cited by 6 publications

(1 citation statement)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The detection limit below 10 18 at/cm 3 is possible to obtain. For the best detection limit of nitrogen the cesium primary beam is used and cluster NO − [ 119,137,138] for ZnO as well as N 13 C − or N 30 Si − for SiC [185,[198][199][200] are detected. In the case of nitrogen in silicon carbide, two equivalent molecules in terms of ion yield (Fig.…”

Section: Sims Measurement Of Nitrogenmentioning

confidence: 99%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

View full text Add to dashboard Cite

The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

show abstract