Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H<sub>2</sub>O

Han, Jeong Hwan; Chung, Yoon Jang; Park, Bo Keun; Kim, Seong Keun; Kim, Hyo‐Suk; Kim, Chang Gyoun; Chung, Taek‐Mo

doi:10.1021/cm503112v

Cited by 78 publications

(58 citation statements)

References 29 publications

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“…It should be noted that only reports with reliable Hall mobility values are summarized in this table. Meanwhile, among the contents of Table , the atomic‐layer deposition (ALD) method has been demonstrated by Han et al for growing p‐type SnO thin films, showing a polycrystalline structure and Hall mobility of 2.9 cm 2 V −1 s −1 . Besides ALD, chemical routes like chemical vapor deposition (CVD) and aerosol‐assisted CVD have also been successfully employed in the fabrication of the SnO thin films; however, no Hall measurement results were shown …”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

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Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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“…Tin oxide thin films have been prepared by spray pyrolysis, 10 CVD, 11 sputtering, 12,13 sol-gel method, 14 pulsed laser deposition, 9 electron beam evaporation, 15 etc., but the recent development of reduction of the feature size in electronic devices has led to the need of controllable and conformal growth methods such as atomic layer deposition (ALD). 16 ALD has been used to deposit SnO 2 films from, e.g., halogenides, 17,18 amides, 19,20 alkoxides, 21 and alkyltin precursors, 22,23 but to our knowledge, only one precursor, bis(1-dimethylamino-2-methyl-2-propoxy) tin(II), 24 has so far been presented to deposit SnO by ALD. The oxygen source in the SnO process was water.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water

Tupala

Kemell

Mattinen

et al. 2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Tin oxide thin films were grown by atomic layer deposition (ALD) from bis[bis(trimethylsilyl) amino]tin(II) with ozone and water. The ALD growth rate of tin oxide films was examined with respect to substrate temperature, precursor doses, and number of ALD cycles. With ozone two ALD windows were observed, between 80 and 100 C and between 125 and 200 C. The films grown on soda lime glass and silicon substrates were uniform across the substrates. With the water process the growth rate at 100-250 C was 0.05-0.18 Å /cycle, and with the ozone process, the growth rate at 80-200 C was 0.05-0.11 Å /cycle. The films were further studied for composition and morphology. The films deposited with water showed crystallinity with the tetragonal SnO phase, and annealing in air increased the conductivity of the films while the SnO 2 phase appeared. All the films deposited with ozone contained silicon as an impurity and were amorphous and nonconductive both as-deposited and after annealing. The films were further deposited in TiO 2 nanotubes aiming to create a pn-junction which was studied by I-V measurements. The TiO 2 nanostructure functioned also as a test structure for conformality of the processes. V

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“…[26][27][28] Tin monoxide (SnO) is one of the few known p-type semiconductor materials and is hence interesting for electronic applications such as the fabrication of p-n junctions and complementary metal oxide semiconductor (CMOS) architectures. 29,30 Many ALD processes are known in the literature for the deposition of tin oxide films. SnCl 4 , SnI 4 and tetrakisdimethylaminotin (TDMASn) are a few common examples of the Sn metal precursors that are employed in these processes in combination with water, H 2 O 2 , O 3 or oxygen plasma as the reactant.…”

Section: Introductionmentioning

confidence: 99%

Annealing of thin “Tincone” films, a tin-based hybrid material deposited by molecular layer deposition, in reducing, inert, and oxidizing atmospheres

Kerckhove

Dendooven

Detavernier

2018

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Molecular layer deposition (MLD) of hybrid organic-inorganic thin films called "tincones" is achieved using tetrakisdimethylaminotin (TDMASn) as the metal precursor, and glycerol (GL) as the organic reactant. The GL-based process displays linear growth and self-limiting surface reactions in a broad temperature window ranging from 75 • C to 200 • C. At higher temperatures no film growth is possible. The GPC decreases rapidly with increasing temperature from 1.3 A at 75 • C to less than 0.1 A at 200 • C. The films are observed to be smooth with scanning electron microscopy (SEM) and atomic force microscopy (AFM). The hybrid organic-inorganic nature of the films is visible in both infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). As deposited tincone films are annealed in reducing (H 2), inert (He) or oxidizing (O 2) atmospheres. In situ X-ray diffraction (XRD) is employed to study the crystallization of the films during annealing. Tincone films annealed in reducing or inert atmosphere crystallize into a tetragonal SnO phase at 388 • C and 410 • C respectively. These temperatures are lower than the crystallization temperature of 480 • C for ALD tin oxide films annealed in H 2. Tincone films annealed in oxygen crystallize into a SnO 2 phase at a temperature of 523 • C which is similar to the crystallization temperature for ALD tin oxide films annealed in He or O 2. This reduced temperature for crystallization into SnO for the tincone films is interesting since SnO is one of the few metal oxides known as a p-type semiconductor material.

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Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H₂O

Cited by 78 publications

References 29 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water

Annealing of thin “Tincone” films, a tin-based hybrid material deposited by molecular layer deposition, in reducing, inert, and oxidizing atmospheres

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Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

Cited by 78 publications

References 29 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Atomic layer deposition of tin oxide thin films from bis[bis(trimethylsilyl)amino]tin(II) with ozone and water

Annealing of thin “Tincone” films, a tin-based hybrid material deposited by molecular layer deposition, in reducing, inert, and oxidizing atmospheres

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Product

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Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H₂O