1998
DOI: 10.1007/s11664-998-0333-7
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Growth of oriented diamond film on single crystalline 6H-SiC substrates

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“…In our experiments, no diamond films were observed on either surfaces. We note that, at variance with what can be obtained with CVD techniques of SiC surfaces, 29 this is consistent with the fact that no aggressive surface pretreatment like HF etching and exposure to hydrogen plasma were employed in our surface treatment.…”
supporting
confidence: 89%
“…In our experiments, no diamond films were observed on either surfaces. We note that, at variance with what can be obtained with CVD techniques of SiC surfaces, 29 this is consistent with the fact that no aggressive surface pretreatment like HF etching and exposure to hydrogen plasma were employed in our surface treatment.…”
supporting
confidence: 89%