Growth of low dislocation density InP single crystals by the phosphorus vapor controlled LEC method

Vapour pressure controlled Czochralski (VCZ) growth — a method to produce electronic materials with low dislocation density

“…A similar average value (4-8 mm h-') has been reported by NEUBERT et al. Considering a temperature gradient of 35 K cm-', surprisingly, a relatively high pulling rate of 10 mm h-' was used by KOHIRO et al 1991KOHIRO et al , 1996 for InP VCZ growth.…”

“…Fig. 4 shows the axial temperature distribution and fluctuations in a phosphorus vapour controlled InP VCZ arrangement measured by KOHIRO et al 1991.The average temperature gradient in the B203 layer near the crystallization front is of about 30 K cm-', much lower and of higher constancy than in the case of conventional LEC with approximately 140 K cm-'. Unfortunately, only small informations on temperature measurements inside the VCZ chambers have been published until now due to the difficulty of such analysis.…”

“…2) of low dislocation InP until now (KOHIRO et al 1991(KOHIRO et al , 1996. Recently the Toshiba Co. (USUDA and FUJII) oxide crystals.…”

“…Many authors reported the application of various after-heater systems in order to reduce the temperature gradients in both radial and axial directions as can bee seen in Figs. la,b and 2, for example (AZUMA; TOMIZAWA et al 1984;MORI;TATSUMI et al 1989;KOHIRO et al 1991KOHIRO et al , 1996. The Sumitomo Electric Co. used a combination of four heaters to maintain low temperature differences within the inner growth chamber and to heat the liquid seals around the leadtroughs of crucible and pulling rods (Fig.…”

“…WATANABE; AZUMA; MATSUMURA; OZAWA et al; TADA; SATO; SASAKI have used liquid B203 mostly in Mo sealing lids. However, KOHIRO et al 1991 that a mechanical sealing without using any encapsulant makes the VCZ method (here InP) suitable for industrial production (see also ODA). Until now there are only rare information in the literature on the chamber material used.…”