Supplementing Silicon: the Compound Semiconductors

Jurisch, M.; Jacob, H.; Flade, T.

doi:10.1007/978-3-662-09897-4_21

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2023

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Cited by 3 publications

(1 citation statement)

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“…This is mainly due to some unique physical properties allowing for superior functionality of devices [1] and also to the progress made in the production of GaAs single crystals and wafers/ substrates [2]. High-quality substrates with device-specific properties are required not exhibiting any substrate-related features that might adversely affect the performance of the devices.…”

Section: Introductionmentioning

confidence: 99%

Inclusions in LEC-grown Si GaAs single crystals

Eichler

Fliegel

Jurisch

et al. 2008

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Inclusions in LEC-grown Si GaAs single crystals

Eichler

Fliegel

Jurisch

et al. 2008

Journal of Crystal Growth

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Exploration of Gas Discharges with GaAs, GaP and ZnSe Electrodes Under Atmospheric Pressure

Kurt

2018

Journal of Elec Materi

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AlGaN/GaN heterostructures for high power and high-speed applications

Joshi

2023

International Journal of Materials Research

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AlGaN/GaN heterostructures are one of the most promising semiconducting structures for fabricating high-speed and high-power electronic devices such as high electron mobility transistors and heterojunction bipolar transistors. Due to the lack of native substrates, these epitaxial structures are generally grown on foreign substrate materials such as sapphire, SiC and Si by using two-step growth techniques. In this paper, a few test structures along with TLM pads, FET structure, ohmic contacts and Schottky contacts have been fabricated on AlGaN/GaN heterostructure by photolithography, reactive ion etching, and e-beam metallization. Transmission line measurement has been used to calculate the sheet resistivity and contact resistance of ohmic pads. Current voltage measurement is used to test an FET structure of size 1 × 150 µm2 with a gate length of 4 µm and source to drain spacing of 5 µm.

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Supplementing Silicon: the Compound Semiconductors

Cited by 3 publications

References 34 publications

Inclusions in LEC-grown Si GaAs single crystals

Inclusions in LEC-grown Si GaAs single crystals

Exploration of Gas Discharges with GaAs, GaP and ZnSe Electrodes Under Atmospheric Pressure

AlGaN/GaN heterostructures for high power and high-speed applications

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