Growth of long-length 3 inch diameter Fe-doped InP single crystals

Kohiro, K.; Ohta, Mitsuo; Oda, Osamu

doi:10.1016/0022-0248(95)00339-8

Cited by 29 publications

(16 citation statements)

References 8 publications

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“…The turbulent gas convection influences significantly the heat exchange in the furnace, in particular, the temperature distribution over the crystal surface. As noted by Kohiro et al [16], the axial temperature gradient in the crystal directly affects dislocations in the InP crystal and the shape of the melt/crystal interface. Thus, the account of the gas flow is necessary to predict accurately the solidification front geometry and the heat transfer in high pressure LEC systems.…”

Section: D/3d Computations Of Inp Crystal Growthmentioning

confidence: 88%

“…The data reported in Ref. [16] on the system geometry and growth conditions are insufficient to reproduce directly this experiment in our numerical analysis. However, the crystallization rate and crystal geometrical parameters given in the paper are in agreement with our analysis, which allows us to make a qualitative comparison.…”

Section: D/3d Computations Of Inp Crystal Growthmentioning

confidence: 88%

“…The operating conditions were chosen as follows. The growth rate of 10 mm/h and the crystal diameter of 3 inch were the same as reported by Kohiro et al [16], the gas pressure was taken to be 40 atm, and the crucible/crystal rotations were 5/-5 rpm. Fig.…”

Section: D/3d Computations Of Inp Crystal Growthmentioning

confidence: 99%

“…5. The symbols indicate the experimental interface geometry reported by Kohiro et al [16] for a higher crucible rotation rate. The data reported in Ref.…”

Section: D/3d Computations Of Inp Crystal Growthmentioning

confidence: 99%

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Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals

Yakovlev¹,

Kalaev²,

Bystrova³

et al. 2003

Cryst. Res. Technol.

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The results of three-dimensional unsteady modeling of melt turbulent convection with prediction of the crystallization front geometry in liquid encapsulated Czochralski growth of InP bulk crystals and vapor pressure controlled Czochralski growth of GaAs bulk crystals are presented. The three-dimensional model is combined with axisymmetric calculations of heat and mass transfer in the entire furnace. A comprehensive numerical analysis using various two-dimensional steady and three-dimensional unsteady models is also performed to explore their possibilities in predicting the melt/crystal interface geometry. The results obtained with different numerical approaches are analyzed and compared with available experimental data. It has been found that three-dimensional unsteady consideration of heat and mass transfer in the crystallization zone provides a good reproduction of the solidification front geometry for both GaAs and InP crystal growth.

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Section: D/3d Computations Of Inp Crystal Growthmentioning

confidence: 88%

Section: D/3d Computations Of Inp Crystal Growthmentioning

confidence: 88%

Section: D/3d Computations Of Inp Crystal Growthmentioning

confidence: 99%

“…5. The symbols indicate the experimental interface geometry reported by Kohiro et al [16] for a higher crucible rotation rate. The data reported in Ref.…”

Section: D/3d Computations Of Inp Crystal Growthmentioning

confidence: 99%

See 2 more Smart Citations

Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals

Yakovlev¹,

Kalaev²,

Bystrova³

et al. 2003

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

“…2) of low dislocation InP until now (KOHIRO et al 1991(KOHIRO et al , 1996. Recently the Toshiba Co. (USUDA and FUJII) oxide crystals.…”

Section: Hot Wall Czochralski (H Wc) Technique Before the Liquid Encmentioning

confidence: 99%

Vapour pressure controlled Czochralski (VCZ) growth — a method to produce electronic materials with low dislocation density

Rudolph

Neubert

Arulkumaran

et al. 1997

Cryst. Res. Technol.

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Investigation of morphology evolution of the In‐rich inclusions and the corresponding defects in InP single crystals

Wang

Sun

Gao

et al. 2015

Crystal Research and Technology

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Submicron, micron and millimeter‐scale In‐rich inclusions with different polyhedral morphologies are observed, which are directionally embedded in the InP matrix along <011> direction. The arrangement direction and morphological change of the In‐rich inclusions at different scales are investigated to reveal their morphology evolution. The relative size of the facets ({100} and {111}P/In) bounding the polyhedral In‐rich inclusions is different from the reported results in other crystals, especially when the size of In‐rich inclusions is up to millimeter‐scale. The growth rate dispersion effect and the initial morphologies of the In‐rich droplets have an obvious effect on the final shape of the In‐rich inclusions. Dislocation enrichment surrounding the In‐rich inclusion is observed, which is contributed to the volume expansion of liquid‐solid phase transition and the difference of the thermal expansion coefficient and thermal conductivity between In‐rich droplet and InP matrix. The size and shape of the dislocation enriched region are closely related to the size and shape of the originating In‐rich droplet and the growth condition.

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Growth of long-length 3 inch diameter Fe-doped InP single crystals

Cited by 29 publications

References 8 publications

Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals

Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals

Vapour pressure controlled Czochralski (VCZ) growth — a method to produce electronic materials with low dislocation density

Investigation of morphology evolution of the In‐rich inclusions and the corresponding defects in InP single crystals

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