Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy

Sato, Taketomo; Motohisa, Junichi; Noborisaka, J.; Hara, Shinjiro; Fukui, Takashi

doi:10.1016/j.jcrysgro.2007.12.048

Cited by 52 publications

(56 citation statements)

References 14 publications

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“…This result is similar to our previous results presented in Ref. [21], where time evolution of the NW size was explained by a model based on a diffusion of growth species. In this model, it was argued that the lateral growth took place when h becomes larger than the critical length, which is determined by the diffusion length on the sidewalls of the NWs.…”

Section: Time Evolution Of Nanowire Sizesupporting

confidence: 93%

“…The lines are eye guides. Because the actual growth rate depends on various factors (for instance, V/III ratio, pitch a [8], and group-III supply ratio [21]), the vertical scale is shown as an arbitrary scale. As mentioned in the previous section, quite different trends in temperature dependence for the indium-rich and gallium-rich InGaAs NWs are shown.…”

Section: Composition-dependent Behavior Of Temperature Dependencementioning

confidence: 99%

“…[21], which was carried out at fixed T G and found that axial growth rate decreases as In supply increases.…”

Section: Composition-dependent Behavior Of Temperature Dependencementioning

confidence: 99%

“…In a recent study on SA-grown InGaAs NWs [18], we obtained highly uniform NWs and found that their alloy composition was constant along their whole length, which is more favorable to VLS-grown NWs [19,20] where their alloy composition varied unacceptably. However, our previous reports on the SA-growth of InGaAs NWs are still limited to the cases where growth rate and alloy composition were investigated as a function of group-III supply ratio [21,22] at fixed temperature, and of growth temperature under gallium-rich supply condition [23]. In the present study, temperature dependence of the growth of InGaAs NWs under an indium-rich supply condition was investigated and was compared with our previous results on InAs, gallium-rich InGaAs and GaAs NWs.…”

Section: Introductionmentioning

confidence: 99%

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Influence of growth temperature on growth of InGaAs nanowires in selective-area metal–organic vapor-phase epitaxy

Kohashi

Sato

Ikejiri

et al. 2012

Journal of Crystal Growth

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Indium-rich InGaAs nanowires were grown on an InP(111)B substrate by catalyst-free selective-area metal-organic vapor phase epitaxy, and its growth-temperature dependence of growth rate and composition was studied. In particular, nanowire growth rate rapidly decreases as growth temperature increases. This tendency is opposite (for a similar temperature range) to that found in a previous study on selective-area growth of gallium-rich InGaAs nanowires. This difference between indium-rich and gallium-rich nanowires suggests that the influence of growth temperature on the growth of InGaAs nanowires is dependent on the group-III supply ratio. On the basis of previous experimental observations in InAs and GaAs nanowires, temperature dependence of nanowire growth rate and its dependence on group-III supply ratio are predicted. A guideline to determine the optimum growth conditions of InGaAs nanowires is also discussed. Keywords:A1. Nanostructures

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Section: Time Evolution Of Nanowire Sizesupporting

confidence: 93%

Section: Composition-dependent Behavior Of Temperature Dependencementioning

confidence: 99%

“…[21], which was carried out at fixed T G and found that axial growth rate decreases as In supply increases.…”

Section: Composition-dependent Behavior Of Temperature Dependencementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of growth temperature on growth of InGaAs nanowires in selective-area metal–organic vapor-phase epitaxy

Kohashi

Sato

Ikejiri

et al. 2012

Journal of Crystal Growth

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“…InGaAs nanowires have also been obtained by selective area epitaxy. There, the difference in diffusion length between gallium and indium results in a different indium incorporation depending on the distance between the nanowires [26]. To date, it is still controversial as to what extent homogeneous InGaAs nanowires can be obtained and what is the maximum indium concentration [27].…”

Section: Introductionmentioning

confidence: 99%

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires

et al. 2011

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Growth of GaAs and In x Ga 1−x As nanowires by the group-III assisted molecular beam epitaxy growth method on (001)GaAs/SiO 2 substrates is studied in dependence on growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550• C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and electron energy loss spectroscopy. The results show that the incorporation of indium achieved by lowering the growth temperature does not have the effect of increasing the indium concentration in the bulk of the nanowire, which is limited to 3-5%. For growth temperatures below 575• C, indium rich regions form at the surface of the nanowires as a consequence of the radial growth. This results in the formation of quantum dots, which exhibit spectrally narrow luminescence.

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III‐V Nanowires and Related Nanostructures

Joyce

2019

Metalorganic Vapor Phase Epitaxy (MOVPE)

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Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy

Cited by 52 publications

References 14 publications

Influence of growth temperature on growth of InGaAs nanowires in selective-area metal–organic vapor-phase epitaxy

Influence of growth temperature on growth of InGaAs nanowires in selective-area metal–organic vapor-phase epitaxy

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires

III‐V Nanowires and Related Nanostructures

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