In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires

Heiß, Martin; Ketterer, Bernt; Uccelli, Emanuele; Morante, J.R.; Arbiol, Jordi; Morral, Anna Fontcuberta i

doi:10.1088/0957-4484/22/19/195601

Cited by 53 publications

(50 citation statements)

References 38 publications

(61 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this case, continuous growth enables the islands to extend preferentially in the <111> direction because the surface energy is lowest in that direction [22]. Note that the self-assembled growth of the InAs NWs on Si differs from the self-catalyzed growth (i.e., In droplet) of InAs NWs [23][24][25]. For example, the self-assembled growth of the InAs NWs proceeds via the VPE mode only; thus, the diameter of the selfassembled InAs NWs can be very uniform along their growth direction [22].…”

Section: Methodsmentioning

confidence: 99%

Investigation of p-type InAs nanowires grown via Au-assisted and self-assembled methods

Hwang

Shin

2014

Journal of the Korean Physical Society

View full text Add to dashboard Cite

We have investigated the p-type doping profiling of InAs nanowries (NWs) grown via the Auassisted vapor-liquid-sold (VLS) and the self-assembled growth methods. The VLS is the most commonly used mechanism for the growth of semiconductor NWs. The VLS-grown InAs NWs, however, show a large degree of variation in their electrical resistance along their growth direction. In addition, attempts to form heavily p-type doped InAs NWs lead to a strong kinking in the shapes of the NWs, disturbing their one-dimensional growth. In contrast, the p-type doped InAs NWs grown via the self-assembled method exhibit very low and uniform electrical resistance along the growth direction of the NWs. The doping mechanisms of the InAs NWs and their growth methods are further discussed.

show abstract

Section: Methodsmentioning

confidence: 99%

Investigation of p-type InAs nanowires grown via Au-assisted and self-assembled methods

Hwang

Shin

2014

Journal of the Korean Physical Society

View full text Add to dashboard Cite

show abstract

“…Paek et al reported that the In composition in the Ga-catalysed InGaAs NW growth is only 1-2% in spite of a high In/Ga ratio [72]. Heiss et al also demonstrated that the In composition in the group-III assisted InGaAs NW growth is limited to 3-5%, despite the change of the growth temperature [73].…”

Section: Fabrication Methodsmentioning

confidence: 99%

Elongated nanostructures for radial junction solar cells

et al. 2013

View full text Add to dashboard Cite

In solar cell technology, the current trend is to thin down the active absorber layer. The main advantage of a thinner absorber is primarily the reduced consumption of material and energy during production. For thin film silicon (Si) technology, thinning down the absorber layer is of particular interest since both the device throughput of vacuum deposition systems and the stability of the devices are significantly enhanced. These features lead to lower cost per installed watt peak for solar cells, provided that the (stabilized) efficiency is the same as for thicker devices. However, merely thinning down inevitably leads to a reduced light absorption. Therefore, advanced light trapping schemes are crucial to increase the light path length. The use of elongated nanostructures is a promising method for advanced light trapping. The enhanced optical performance originates from orthogonalization of the light's travel path with respect to the direction of carrier collection due to the radial junction, an improved anti-reflection effect thanks to the three-dimensional geometric configuration and the multiple scattering between individual nanostructures. These advantages potentially allow for high efficiency at a significantly reduced quantity and even at a reduced material quality, of the semiconductor material. In this article, several types of elongated nanostructures with the high potential to improve the device performance are reviewed. First, we briefly introduce the conventional solar cells with emphasis on thin film technology, following the most commonly used fabrication techniques for creating nanostructures with a high aspect ratio. Subsequently, several representative applications of elongated nanostructures, such as Si nanowires in realistic photovoltaic (PV) devices, are reviewed. Finally, the scientific challenges and an outlook for nanostructured PV devices are presented.

show abstract

“…This could be attributed to a defect-mediated mechanism. [57][58][59] Fig . 3(d) shows the μ-PL spectra corresponding to the maximum PL intensity of each NM, acquired at 6 K. In our μ-PL setup, the spot size of the excitation laser is comparable to the size of the NMs.…”

Section: (C) and (D)mentioning

confidence: 99%

GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon

et al. 2020

Self Cite

View full text Add to dashboard Cite

show abstract

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires

Cited by 53 publications

References 38 publications

Investigation of p-type InAs nanowires grown via Au-assisted and self-assembled methods

Investigation of p-type InAs nanowires grown via Au-assisted and self-assembled methods

Elongated nanostructures for radial junction solar cells

GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon

Contact Info

Product

Resources

About