III‐V Nanowires and Related Nanostructures

Joyce, Hannah J.

doi:10.1002/9781119313021.ch7

Cited by 1 publication

(1 citation statement)

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“…Using NW heterostructures based on different III-V materials including nitrides (from wide gap GaN to narrow gap InSb) opens a path for Si-integrated III-V optoelectronics in a wide spectral range covering UV, visible, and IR bands. One of the most common ways to produce III-V NWs and III-V NW heterostructures is the vapor-liquid-solid (VLS) method [13], in which the NWs grow from supersaturated catalyst droplets fed from a gaseous phase (vapor in the case of metal organic chemical vapor deposition (MOCVD) [14]) or molecular beams in the case of molecular beam epitaxy (MBE) [15]. The catalyst droplet may either contain a foreign element which does not incorporate into NWs, or made of group III metals constituting the NW itself.…”

Section: Introductionmentioning

confidence: 99%

Kinetic modeling of interfacial abruptness in axial nanowire heterostructures

Leshchenko

Dubrovskiı̆²

2022

Nanotechnology

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Kinetic modeling of the formation of axial heterostructures in III-V nanowires grown by the Au-catalyzed vapor-liquid-solid method is presented. We link the mass balance in the droplet to the crystallization rates of different III-V pairs at the liquid-solid interface. This allows us to describe how the chemical composition changes across a nanowire heterostructure and study the influence of the growth parameters on the interfacial abruptness. It is shown that, at high enough supersaturation in liquid, there is no segregation of different binaries in solid even for materials systems with strong interactions between III-V pairs, such as InGaAs. This leads to the suppression of the miscibility gaps by kinetic factors. The influence of the Au concentration on the interfacial abruptness is found to be complicated. Increasing the Au concentration widens the heterointerface at low Au content and narrows it at high Au content in a catalyst droplet. The model fits quite well the data on the compositional profiles across axial nanowire heterostructures based on both group III and group V interchange. Very sharp heterointerfaces in double of InAs/InP/InAs nanowire heterostructures is explained by a reduced reservoir effect due to low solubility of group V elements in the droplet.

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Section: Introductionmentioning

confidence: 99%