1973
DOI: 10.1016/0022-0248(73)90060-2
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Growth of InBi single crystals

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Cited by 18 publications
(4 citation statements)
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“…Fig. 7 shows the etch patterns on the oppositely matched cleavage counterparts [8,11,12]. As can be seen, there is one to one correspondence of etch pits on the counter parts.…”
Section: Resultsmentioning
confidence: 93%
“…Fig. 7 shows the etch patterns on the oppositely matched cleavage counterparts [8,11,12]. As can be seen, there is one to one correspondence of etch pits on the counter parts.…”
Section: Resultsmentioning
confidence: 93%
“…The dislocation etchant for InBi single crystals developed by various workers [15][16][17] could not give successful result for InBi 0.85 Se 0.15 due to the presence of selenium in these crystals. The perfection of the grown crystal in terms of dislocation content was estimated using a dislocation etchant developed by the present author after numerous trials.…”
Section: Chemical Etchingmentioning
confidence: 92%
“…The crystal exhibits one to one correspondence across the pair of counter parts, which show the perfectness of the crystals. The dislocation etchant for InBi single crystal developed by various workers [11,18,19] could not give successful result for InBiSe due to the presence of selenium in these crystals and on adding impurity the etchant requires new composition for revealing dislocation. After several trials dislocation etchant have been developed, which reveal grown-in and freshly produced dislocation.…”
Section: Surface Morphology and Chemical Etchingmentioning
confidence: 97%