The crystals of InxBi2_xTe 3 (x = 0.1 to 0-5) have been grown by zone-melting method. In order to study anisotropy exhibited by the (0001) plane of the crystals, the directional hardness was determined by producing indentations at various azimuthal orientations of the indentor with respect to the surface over a range 0--180 °. The crystal was rotated about the indentor axis in steps of 15 ° while keeping applied load and loading time constant at 50 g and 20 sec, respectively. For annealing study, the sample was kept at a temperature of 375°C. It was observed that softening of crystal takes place and the hardness decreases to a considerable extent.
The characteristic growth features observed on the top free surface of InBi single crystals grown by the zone-melting method are reported. These features are analysed by stereographic technique and a possible mechanism responsible for the appearance of the characteristic growth features is discussed. A new etchant capable of revealing dislocations inclined to the cleavage plane is also reported.
The effect of various growth parameters; seed morphology, growth-temperature and pH of the mother solution on the growth of TGS single crystals is studied. The effect of these variables on the crystal morphology and perfection is reported. It is shown that: (i) The crystal quality is much dependent on the seed and the growth temperature and (ii) the pH-control is a simple and an effective method for obtaining TGS crystals of required morphology.
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