Growth of highly c-axis-oriented aluminum nitride thin films on molybdenum electrodes using aluminum nitride interlayers

Kamohara, Toshihiro; Akiyama, Morito; Ueno, Naohiro; Nonaka, Kazuhiro; Tochihara, Hiroshi

doi:10.1016/j.jcrysgro.2004.12.014

Cited by 37 publications

(13 citation statements)

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“…This finding is in contrast to a previous HiPIMS study by Ait Aissa et al that showed peak shifts of the AlN(002) reflection as large as 1 . 12,27 The result of XRD measurements on textured Mo substrates for the AlN(002) region for each deposition method is shown in Fig. Ion energies up to about 80 eV were measured in HiPIMS of AlN by Jouan et al 23 The mean-free path is about 2 cm at our operating pressure of 0.4 Pa, 9 and the energy of the ions arriving to the substrate is then determined mainly by the plasma potential.…”

Section: B Film Characterizationmentioning

confidence: 96%

Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

Moreira

Törndahl

Katardjiev

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inHighly textured growth of AlN films on sapphire by magnetron sputtering for high temperature surface acoustic wave applications J. Vac. Sci. Technol. A 29, 021010 (2011); 10.1116/1.3551604 Microstructure and chemical wet etching characteristics of AlN films deposited by ac reactive magnetron sputtering J. Vac. Sci. Technol. A 28, 69 (2010); 10.1116/1.3268620 Effects of deposition parameters on the structure of AlN coatings grown by reactive magnetron sputtering J. Vac. Sci. Technol. A 25, 557 (2007); 10.1116/1.2730513Highly c -axis oriented thin AlN films deposited on gold seed layer for FBAR devices Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an x-scan full width at half maximum value of 5.1 was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

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Section: B Film Characterizationmentioning

confidence: 96%

Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

Moreira

Törndahl

Katardjiev

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Thus the crystal orientation of the AlN films is comparatively lower. 17,18 It is thought that the crystal orientation of the AlN films is decreased by the crystal orientation of the Mo bottom electrodes which exhibit large FWHM values from 11.3°to 12.6°, [19][20][21] because the surface roughness ͑Ra͒ of the Mo electrodes is 0.5 nm and the surface roughness is small. Furthermore, it is known that the migration energy of the adatoms decreases with increasing sputtering pressure, because the adatoms have more collisions with gas atoms under higher pressure.…”

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confidence: 99%

Influence of sputtering pressure on polarity distribution of aluminum nitride thin films

Kamohara

Akiyama

Ueno

et al. 2006

Applied Physics Letters

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The authors have investigated the influence of sputtering pressure on the polarity distribution of aluminum nitride (AlN) films. They have found that sputtering pressure strongly influences the polarity distribution of AlN films prepared on molybdenum electrodes. The polarity distribution of the AlN films was observed by piezoresponse force microscopy. The polarity orientation is decided with respect to each fine grain constituting the AlN films, and polarity conversion from Al polarity to N polarity is observed with increasing sputtering pressure. The piezoelectric response of the films changes from +3.7to−4.4pC∕N with increasing sputtering pressure from 0.36to4.0Pa.

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“…In addition, Olivares et al found that the surface of the bottom electrode can be cleaned by Ar+ bombardment before deposition of AlN, and the RMS value of the bottom electrode is reduced, thereby improving the quality of AlN [ 73 ]. Kamohara et al found that a seed layer between the substrate and the bottom electrode greatly improves the quality of the bottom electrode, thus enhancing the quality of the AlN film [ 68 , 81 ].…”

Section: Methodsmentioning

confidence: 99%

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

et al. 2020

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With the rapid commercialization of fifth generation (5G) technology in the world, the market demand for radio frequency (RF) filters continues to grow. Acoustic wave technology has been attracting great attention as one of the effective solutions for achieving high-performance RF filter operations while offering low cost and small device size. Compared with surface acoustic wave (SAW) resonators, bulk acoustic wave (BAW) resonators have more potential in fabricating high- quality RF filters because of their lower insertion loss and better selectivity in the middle and high frequency bands above 2.5 GHz. Here, we provide a comprehensive review about BAW resonator researches, including materials, structure designs, and characteristics. The basic principles and details of recently proposed BAW resonators are carefully investigated. The materials of poly-crystalline aluminum nitride (AlN), single crystal AlN, doped AlN, and electrode are also analyzed and compared. Common approaches to enhance the performance of BAW resonators, suppression of spurious mode, low temperature sensitivity, and tuning ability are introduced with discussions and suggestions for further improvement. Finally, by looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, we provide clues to specific materials, structure designs, and RF integration technologies for BAW resonators.

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Growth of highly c-axis-oriented aluminum nitride thin films on molybdenum electrodes using aluminum nitride interlayers

Cited by 37 publications

References 14 publications

Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

Influence of sputtering pressure on polarity distribution of aluminum nitride thin films

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

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